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The Influence of Cavities and Point Defects on Cu Gettering and B'Diffusion in Si

Published online by Cambridge University Press:  15 February 2011

J. Wong-Leung ,
J. S. Williams  and
M. Petravić
J. Wong-Leung
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
J. S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
M. Petravić
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
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Abstract

Cavities, formed in Si by hydrogen implantation and subsequent annealing, can provide ideal gettering sites for metal impurities. In this study, we have observed large differences in the accumulation of Cu at cavities depending on whether Cu was introduced into Si during cavity formation or into wafers with pre-formed cavities. The observed behaviour is consistent with a high flux of Si interstitials emitted during cavity formation which induce the dissolution of Cu3Si and the enhanced transport of Cu to cavities. In further studies, boron implantation was carried out into wafers containing pre-formed cavities and transient enhanced diffusion (TED) of boron was suppressed duringsubsequent annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 457
Copyright
Copyright © Materials Research Society 1997

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References

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