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Incorporation of Sb, Bi, and Te Interlayers at the Mo/Cu-In-Ga Interface for the Reaction of Cu(In,Ga)(Se,S)2

Published online by Cambridge University Press:  28 August 2013

Kihwan Kim ,
Jaesung Han  and
William N. Shafarman
Kihwan Kim
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA
Jaesung Han
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA Yeungnam University, Gyeongsan, Gyeongbuk 712-749, Republic of Korea
William N. Shafarman
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA
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Abstract

In this work, we investigate the effects of Sb, Bi, or Te interlayers at the Mo/Cu-In-Ga interface on the reaction to form Cu(In,Ga)(Se,S)2 in order to control void formation and improve adhesion. Interlayers with 10 nm thickness were evaporated onto the Mo back contact prior to sputtering the metal precursors. CIGSS absorber layers were formed by a three-step H2Se/Ar/H2S reaction and solar cells were fabricated. The influences of each interlayer were characterized in the precursor and reacted films in terms of the density of the void formation, film structure and morphology, adhesion, and device performance.

Keywords

photovoltaicthin filmsemiconducting

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References

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