Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-02-04T16:49:00.976Z Has data issue: false hasContentIssue false
  • English
  • Français

Incorporation of Nitrogen Atoms at Si/SiO2 Interfaces of Field Effect Transistors (FETs) to Improve Device Reliability

Published online by Cambridge University Press:  15 February 2011

G. Lucovsky ,
D. R. Lee ,
Z. Jing ,
J. L. Whitten ,
C. Parker  and
J. R. Hauser
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
D. R. Lee
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
Z. Jing
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
J. L. Whitten
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
C. Parker
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
J. R. Hauser
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
Get access

Abstract

Incorporation of N-atoms at the Si-Si02 interface in field effect transistors, FETs, with ultrathin dielectrics (≤ 5.5 nm) improves device reliability. Four aspects of our recent research on nitrided Si-Si02 interfaces are discussed in this paper: i) the low-temperature/low-thermal budget process by which interface chemistry is controlled, and optimized; ii) the use of on-line and off-line diagnostics to determine the spatial confinement and concentration of interfacial N-atom incorporation; iii) comparisons of device properties for non-nitrided and nitrided interfaces; and iv) the proposal of an atom-scale model for the role that interfacial N-atoms play in improving device reliability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 321
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] DiMaria, D. J., Micorelectronic Engineering 28 (1995) 63.Google Scholar
[2] Han, L. K., Bhat, M., Wristers, D., Wang, H. H. and Kwong, D. L., Micorelectronic Engineering 28, 89 (1995).Google Scholar
[3] Green, M., Brasen, D., Evans-Lutterodt, K. W., Feldman, L. C., Krisch, K., Lennard, W., Tang, H.-T., Manchanda, L., and Tang, M.-T., Appl. Phys. Lett. 65, 848 (1994).Google Scholar
[4] Ito, T., Nakamura, T., and Ishikawa, H., IEEE Trans. Electron Devices 29, 498(1982).Google Scholar
[5] Hori, T. and Iwasaki, H., IEEE Electron Device Lett. 10, 195 (1989).Google Scholar
[6] Lo, G. Q. and Kwong, D. L., IEEE Electron Device Letters 12, 175 (1991).Google Scholar
[7] Okadaet, Y. al., IEEE Trans. Electron Devices 41, 191 (1994).Google Scholar
[8] Ma, Y., Yasuda, T., Habermehl, S., and Lucovsky, G., J. Vac. Sci. Technol. B 11, 1533 (1993).Google Scholar
[9] Ma, Y., Yasuda, T., and Lucovsky, G., Appl. Phys. Lett. 64, 2226 (1994).Google Scholar
[10] Hattangady, S. V., Thesis, Ph.D., North Carolina State University, 1995.Google Scholar
[11] Stahlbush, R. E., Cartier, E. and Buchanan, D. A., Micorelectronic Engineering 28, 15 (1995)Google Scholar
[12] Yasuda, T., Ma, Y., Habermel, S. and Lucovsky, G., Appl. Phys. Lett. 60, 434 (1992).Google Scholar
[13] Lucovsky, G., Wortman, J. J., Yasuda, T., Xu, X-L, Misra, V, Hattangady, S. V., Ma, Y. and Hornung, B., J. Vac. Sci. Technol. B 12, 2839 (1994).Google Scholar
[14] Lee, D. R., Lucovsky, G., Denker, M. S. and Magee, C., J. Vac. Sci. Technol. A13, 607 (1995); D. R. Lee, C. Parker, J. R.Hauser and G. Lucovsky, J. Vac. Sci. Technol. B13, 1788 (1995).Google Scholar
[15] Meyer, C., Liipke, G., Emmerichs, U., Wolter, F., Kurz, H., Bjorkman, C. H. and Lucovsky, G., Phys. Rev. Lett. (1995) 74, 3001.Google Scholar
[16] Shin, H., Yeric, G. M., Tasch, A. F. and Mazier, C. M., Solid State Electron. 34, 545 (1991)Google Scholar
[17] Cartier, E. and Stathis, J. H., Micorelectronic Engineering 28, 3 (1995).Google Scholar
[18] Jing, Z. and Lucovsky, G., J. Vac. Sci. Technol. B 13, 1621 (1995).Google Scholar