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Impurity Diffusion in SiGe Alloys: Strain and Composition Effects

Published online by Cambridge University Press:  10 February 2011

Arne Nylandsted Larsen
Arne Nylandsted Larsen*
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark
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Abstract

The advent of epitaxial-growth techniques dedicated to the growth of epitaxial layers of group-IV semiconductors and their alloys has opened up new possibilities for novel types of diffusion experiments and thus for critical tests of existing diffusion theories. It is now possible to grow test structures for diffusion consisting of well-defined narrow distributions of tracer impurities in epitaxial layers of biaxial-strained or relaxed alloys of different compositions. This enables studies of alloy effects and/or strain effects on diffusion with varying strain energy for a well-defined type of strain (tensile or compressive). A review is presented on recently published results on impurity diffusion in strained and relaxed, epitaxial SiGe alloy layers. As almost all these studies have focused on boron and antimony diffusion, these two impurities will have the leading roles in this review.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 187
Copyright
Copyright © Materials Research Society 1998

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References

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