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Improvement of film Quality of A-Si:H Deposited by Photo-CVD using SiH2Cl2

Published online by Cambridge University Press:  16 February 2011

T. Oshima ,
K. Yamaguchi ,
A. Yamada ,
M. Konagai  and
K. Takahashi
T. Oshima
Affiliation:
Tokyo Institute of Technology, Department of Physical Electronics, 2–12–1 O-okayama, Meguroku, Tokyo 152, Japan
K. Yamaguchi
Affiliation:
Tokyo Institute of Technology, Department of Electrical and Electronic Engineering, 2–12–1 O-okayama, Meguroku, Tokyo 152, Japan
A. Yamada
Affiliation:
Tokyo Institute of Technology, Department of Physical Electronics, 2–12–1 O-okayama, Meguroku, Tokyo 152, Japan
M. Konagai
Affiliation:
Tokyo Institute of Technology, Department of Electrical and Electronic Engineering, 2–12–1 O-okayama, Meguroku, Tokyo 152, Japan
K. Takahashi
Affiliation:
Tokyo Institute of Technology, Department of Electrical and Electronic Engineering, 2–12–1 O-okayama, Meguroku, Tokyo 152, Japan
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Abstract

Hydrogenated Amorphous silicon films (a-Si:H) were prepared by mercury sensitized photo-CVD using SiH4 and SiH2Cl2 gas mixture. The effects of chlorine (Cl) on the electrical, optical and structural properties of the a-Si:H films were investigated. It was found that a small addition of SiH2Cl2 to the deposition system increases the photo-sensitivity, decreases the defect density, and reduces the light induced degradation of a-Si:H films. At a large addition of SiH2Cl2, however, the CI incorporation into the films was observed, resulting in the deterioration of the film properties. The electrical and optical properties were successfully improved by the H2 dilution when the films were deposited with a large addition of SiH2Cl2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 91
Copyright
Copyright © Materials Research Society 1994

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