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Improved Surface Roughness at Poly-Oxide/Poly-Si Interface by a Novel Oxidation Method

Published online by Cambridge University Press:  15 February 2011

M.C. Jun ,
J.W. Kim ,
K.B. Kim ,
B.C. Ahn  and
M.K. Han
M.C. Jun
Affiliation:
Dept. of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
J.W. Kim
Affiliation:
Dept. of Metallurgical Engineering, Seoul National University, Seoul 151–742, Korea
K.B. Kim
Affiliation:
Dept. of Metallurgical Engineering, Seoul National University, Seoul 151–742, Korea
B.C. Ahn
Affiliation:
Anyang Research Lab., Goldstar Co., Ltd., Anyang-Shi, Kyungki-Do 430–080, Korea
M.K. Han
Affiliation:
Dept. of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
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Abstract

We present a novel oxidation method to improve the surface roughness at the poly-oxide/poly-Si interface. Instead of directly oxidizing the poly-Si to the desired thickness of the SiO2, a thin oxide layer is thermally grown on the poly-Si layer and then an a-Si layer is deposited on the top of the oxide layer. The a-Si layer is used as a silicon-source during next step of oxidation. The a-Si layer is fully oxidized until the poly-oxide/poly-Si interface advances below the initial interface. For comparison, the poly-oxide/poly-Si interface is also obtained by the conventional oxidation method. The surface roughness at the interface is investigated using transmission electron microscopy (TEM) and atomic force microscopy (AFM). For the novel oxidation method with the 50 Å thick intermediate oxide, the rms surface roughness at the poly-oxide/poly-Si interface is 30 Å, whereas that is 120 Å for the conventional method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 505
Copyright
Copyright © Materials Research Society 1994

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References

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