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Impact Excitation And Auger Quenching Processes In Er Doped Light Emitting Si Devices

Published online by Cambridge University Press:  10 February 2011

G. Franzo' ,
F. Priolo  and
S. Coffa
G. Franzo'
Affiliation:
CNR – IMETEM, Stradale Primosole 50, 195121 Catania (Italy)
F. Priolo
Affiliation:
INFM and Dipartimento di Fisica dell'Università, Corso Italia 57,195129 Catania (Italy)
S. Coffa
Affiliation:
CNR – IMETEM, Stradale Primosole 50, 195121 Catania (Italy)
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Abstract

A detailed investigation of the Auger non radiative de-excitation processes, which compete with the radiative emission of Er in Si, will be presented. This process, in which the energy released by the Er de-excitation is transferred to free carriers, is demonstrated to be extremely efficient and characterized by an Auger coefficient CA˜4.4×l0−13 cm3/s. This Auger process and an efficient incorporation method have been used to improve the performances of Er implanted light emitting diodes. It will be shown that by exciting Er within the depletion region of reverse biased p+-n+ Si diodes in the breakdown regime, it is possible to avoid Auger quenching and to achieve high efficiency. Moreover, at the switch off of the diode, when the depletion region shrinks, the excited Er ions become suddenly embedded within the neutral heavily doped region. In this region Auger de-excitation with free carriers sets in allowing to modulate the light signal at frequencies as high as a few MHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 127
Copyright
Copyright © Materials Research Society 1998

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