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Imaging Oxide-Covered Doped Silicon Structures Using Low-Energy Electron Microscopy

Published online by Cambridge University Press:  01 February 2011

Meredith Anderson ,
C.Y. Nakakura ,
K.F. Saiz  and
G.L. Kellogg
Meredith Anderson
Affiliation:
mlande@sandia.gov, Sandia National Laboratories, XXX, XXX, Albuquerque, NM, 87123, United States
C.Y. Nakakura
Affiliation:
mlande@sandia.gov, Sandia National Laboratories, XXX, XXX, Albuquerque, NM, 87123, United States
K.F. Saiz
Affiliation:
mlande@sandia.gov, Sandia National Laboratories, XXX, XXX, Albuquerque, NM, 87123, United States
G.L. Kellogg
Affiliation:
mlande@sandia.gov, Sandia National Laboratories, XXX, XXX, Albuquerque, NM, 87123, United States
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Abstract

Low energy electron microscopy (LEEM) operated at incident electron energies just above the “mirror” mode is used to image Si-based test devices. Significant p- vs. n- doping contrast is observed, even when the structures are covered with a ∼3.5 nm thermal oxide. The contrast arises from a difference in surface potential between the two regions and is related to both p-n work function differences and electron-beam-induced charging of the oxide. The results show that the LEEM is capable of characterizing pn junctions without complicated sample preparation and that it is a promising technique for rapid, non-destructive imaging of microelectronic devices.

Keywords

Simicroelectronicsnanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1026: Symposium C – Quantitative Electron Microscopy for Materials Science , 2007 , 1026-C15-03
Copyright
Copyright © Materials Research Society 2008

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References

1. Giesen, M., Phaneuf, R. J., Williams, E. D., and Einstein, T. L., Surface Sci. 396, 411 (1998).Google Scholar
2. Ballarotto, V. W., Siegrist, K., Phaneuf, R. J., Williams, E. D., and Mogren, S., Surface Sci. 461, L570 (2000).Google Scholar
3. Ballarotto, V. W., Siegrist, K., Phaneuf, R. J., Williams, E. D., Wang, W.-C., and Nemanich, R. J., Appl. Phys. Lett. 78, 3547 (2001).10.1063/1.1376151Google Scholar
4. Ballarotto, V. W., Breban, M., Siegrist, K., Phaneuf, R. J., and Williams, E. D., J. Vac. Sci. Technol. B, 20, 2514 (2002).10.1116/1.1525007Google Scholar
5. Siegrist, K., Ballarotto, V. W., Breban, M., Yongsunthon, R., and Williams, E. D., Appl. Phys. Lett. 84, 1419 (2004).10.1063/1.1650914Google Scholar
6. Frank, L., Müllerová, I., Valdaitsev, D. A., Gloskovskii, A., Neoijko, S. A., Elmers, H.-J., and Shönhense, G., J. Appl. Phys. 100, 093712 (2006).10.1063/1.2364044Google Scholar
7. Elmitec Elektronnenmikroskopie, GmbH. For a review of the technique, see: Bauer, E., Rep. Prog. Phys. 57, 895 (1994).10.1088/0034-4885/57/9/002Google Scholar
8. Anderson, M. L., Nakakura, C. Y., and Kellogg, G. L., unpublished.Google Scholar