Published online by Cambridge University Press: 01 February 2011
Low energy electron microscopy (LEEM) operated at incident electron energies just above the “mirror” mode is used to image Si-based test devices. Significant p- vs. n- doping contrast is observed, even when the structures are covered with a ∼3.5 nm thermal oxide. The contrast arises from a difference in surface potential between the two regions and is related to both p-n work function differences and electron-beam-induced charging of the oxide. The results show that the LEEM is capable of characterizing pn junctions without complicated sample preparation and that it is a promising technique for rapid, non-destructive imaging of microelectronic devices.
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