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Illumination- and Annealing-Induced Changes in the Infrared and Raman Spectra of a-Si:H

Published online by Cambridge University Press:  17 March 2011

L.-F. Arsenault ,
S. Lebiba ,
E. Sacher  and
A. Yelon
L.-F. Arsenault
Affiliation:
Department of Engineering Physics and Materials Engineering Ecole Polytechnique, Montreal, Quebec, H3C 3A7, Canada
E. Sacher
Affiliation:
Department of Engineering Physics and Materials Engineering Ecole Polytechnique, Montreal, Quebec, H3C 3A7, Canada
A. Yelon
Affiliation:
Department of Engineering Physics and Materials Engineering Ecole Polytechnique, Montreal, Quebec, H3C 3A7, Canada
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Abstract

We have investigated the changes, produced by light-soaking, in both the IR and Raman responses of the Si-Hn stretching peaks in the 2000-2100 cm−1 range. Our observations of the IR response are in qualitative agreement with those of Kong and co-workers [1]: that is, short-term light soaking produces an increase in the intensity of the signal and a simultaneous shift to lower frequency. In contrast, short-term light soaking decreases the total intensity of the Raman signal in the 2000-2100 cm−1 range, when normalized to the TO phonon peak at about 480 cm−1. In both cases, these modifications are reversed on annealing at 200° C. We suggest that these changes are attributable to alterations in the environments of the Si-Hn bonds, with the resultant transfer of intensity between IR and Raman matrix elements. Details of the evolution of the components of the Raman spectrum in the 2000-2100 cm−1 range are presented, and compared with IR changes in the same range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A14.3
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Zhao, Y., Zhang, D., Kong, G., Pan, G. and Liao, X., Phys. Rev. Lett. 74, 558 (1995); G.L. Kong, D.L. Zhang, G.Z. Yue, Y.Q. Wang and X.B. Liao, in Amorphous and Microcrystalline Silicon Technology–1998, MRS. Proc. 507, R. Schropp, H.M. Branz, M. Hack, I. Shimizu and S. Wagner, eds., Materials Research Society, Warrendale, PA, 1998, p. 697.Google Scholar
2.For a historical survey and overview of recent results, see Fritzsche, H., Annual Reviews of Materials Science, Volume 31, Annual Reviews, Palo Alto, CA, in press.Google Scholar
3. Rosencwaig, A., Photoacoustics and Photoacoustic Spectroscopy, Wiley, New York, 1980.Google Scholar
4. Sheng, S., Kong, G. and Liao, X., Solid State Commun., 116, 519 (2000).Google Scholar
5. Biswas, R. and Li, Y.-P., Phys. Rev. Lett., 82, 2512 (1999).Google Scholar
6. Ivanda, M., Gamulin, O., Furic, K. and Gracin, D., J. Mol. Struct., 267, 275 (1992).Google Scholar
7. Beeman, D., Tsu, R. and Thorpe, M.F., Phys. Rev B, 32, 874 (1985).Google Scholar
8See, e. g., Lengsfeld, P., Nickel, N.H. and Fuhs, W., J. Non-Cryst. Solids, 266–269, 659 (2000).Google Scholar