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II-VI Compounds with Fe - New Family of Semimagnetic Semiconductors

Published online by Cambridge University Press:  26 February 2011

Andrzej Mycielski
Andrzej Mycielski*
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al. Lotnik6w 32/46, 02-668 Warsaw, Poland
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Abstract

Several experimental methods: absorption, photoemission and transport measurements were used to determine the energy position of substitutional Fe2+ (3d6) donor state in the band structure of the semimagnetic semiconductor Hg1-v-xCdvFexSe for 0≤v≤0.7 and v+x=l, and x≤0.15. For v≤0.40, Fe2+(3d6) level is a resonant donor located in the conduction band. For v=O (HgSe) we obtain 230 meV for the position of Fe2+(3d6) level with respect to the bottom of the conduction band which coincides with the position of the Fermi level for electron concentration N ≅5x1018 cm-3. Surprisingly, the mobility of free electrons (T∼4.2K) is abnormally high and the Dingle temperature measured in quantum magnetoresistivity oscillations (SdH effect) and magnetooptical measurements is abnormally low. Because of the Coulomb interaction between the ionized donors, at low T, there will appear some correlation of their positions. This may lead to a kind of “liquefying” of the system of ions and to its “crystallisation” (i.e. formation of a superlattice or hyperlattice of ionized donors) at even lower T. The space-ordering of ionized donors influences dramatically the free-carrier scattering and correspondingly explains the high mobility and low Dingle temperature. Finally, we shall also present some magnetic properties of these new semimagnetic materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 89: Symposium Q – Diluted Magnetic (Semimagnetic) Semiconductors , 1986 , 159
Copyright
Copyright © Materials Research Society 1987

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References

1. Guldner, Y., Rigaux, C., Menant, M., Mullin, D.P. and Furdyna, J.K., Solid State Commun. 33, 133 (1980).Google Scholar
2. Serre, H., Bastard, G., Rigaux, C., Mycielski, J. and Furdyna, J.K., Proc. 4th Int. Conf. Physics of Narrow Gap Semiconductors, edited by Gornik, E., Heinrich, H. and Polmetshofer, L. (Springer, Berlin, 1982), p. 321.Google Scholar
3. Twardowski, A., Hennel, A.M., von Ortenberg, M. and Demianiuk, M., Proc. 17th Int. Conf. Physics of Semiconductors, San Francisco, edited by Chadi, J.D. and Harrison, W.A. (Springer, New York, 1985) p.1439.Google Scholar
4. Joshi, N.V. and Mogollon, L., Prog. Cryst. Growth Charact. 10, 65 (1985).Google Scholar
5. Abdel-Maksoud, S., Fau, C., Calas, J., Averous, M., Lombos, B., Brun, G. and Tedenac, J.C., Solid State Commun. 54, 811 (1985).Google Scholar
6. Lewicki, A., Tarnawski, Z. and Mycielski, A., Acta Physica Polonica A67, 357 (1985).Google Scholar
7. Twardowski, A., von Ortenberg, M. and Demianiuk, M., J. Cryst. Growth 72, 401 (1985).CrossRefGoogle Scholar
8. Mycielski, A., Dzwonkowski, P., Kowalski, B., Orlowski, B.A., Dobrowolska, M., Arciszewska, M., Dobrowolski, W. and Baranowski, J.M., J. Phys. C: Solid State Phys. 19, 3605 (1986).CrossRefGoogle Scholar
9. Vaziri, M., Dqbska, U. and Reifenberger, R., Appl. Phys. Lett. 47 (4), 407 (1985).Google Scholar
10. Vogl, P. and Baranowski, J.M., Acta Physica Polonica, A67, 133 (1985).Google Scholar
11. Vogl, P. and Baranowski, J.M., Proc. 17th Int. Conf. Physics of Semiconductors, San Francisco, edited by Chadi, J.D. and Harrison, W.A. (Springer, New York 1985), p. 623.Google Scholar
12. Langer, J.M. and , Heinrich, Phys. Rev. Lett. 55, 1414 (1985).Google Scholar
13. Orłowski, B.A., Phys. Status Solidi b95, K31– (1979).CrossRefGoogle Scholar
14. Taniguchi, M., Ley, L., Johnson, R.L. and Cardona, M., Phys. Rev. B33, 1206 (1986).Google Scholar
15. B.A. Orłowski, Kopalko, K. and Chab, W., Solid State Commun. 50, 749 (1984).Google Scholar
16. Franciosi, A., Chang, Shu, Reifenberger, R., Debska, U. and Riedel, R., Phys. Rev. B32, 6682 (1985).Google Scholar
17. Franciosi, A., Caprile, C. and Reinfenberger, R., Phys. Rev. B31, 8061 (1985).CrossRefGoogle Scholar
18. Summers, C.J. and Broerman, J.G., Phys. Rev. B21, 559 (1980).Google Scholar
19. Mycielski, A., Kossut, J., Dobrowolska, M. and Dobrowolski, W., J. Phys. C: Solid State Phys. 15, 3293 (1982).CrossRefGoogle Scholar
20. Baranowski, J.M. and Langer, J.M., Phys. Status Solidi (b) 48, 863 (1971).Google Scholar
21. Allen, J.W., J. Phys. C: Solid State Phys. 2, 1077 (1969).Google Scholar
22. Langer, J.M., Phys. Status Solidi (b) 47, 443 (1971).Google Scholar
23. Wiśniewski, P. and Nawrocki, M., Phys. Status Solidi (b) 117, K43 (1983).Google Scholar
24. Slack, G.A., Ham, F.S. and Chrenko, R.M., Phys. Rev. 152, 376 (1966).Google Scholar
25. Baranowski, J.M., Allen, J.W. and Pearson, G.L., Phys. Rev. 160, 627 (1967).CrossRefGoogle Scholar
26. Kane, O.E., Phys. Rev. 127, 131 (1962).Google Scholar
27. Wall, A., Caprile, C., Franciosi, A., Vaziri, M., Reinfenberger, R. and Furdyna, J.K., J. Vac. Sci. Technolog (in press); A. Franciosi, A. Wall, S. Chang, P. Philip, N. Troullier, A. Raisanem, R. Reifenberger, F. Pool, J.K. Furdyna presented at the 18th Int. Conf. Physics of Semiconductors, Stockholm, 1986.Google Scholar
28. Kunii, S. and Hirahara, E., J. Phys. Soc. Japan 19, 1258 (1964).Google Scholar
29. Kozacki, A., Otmezguine, S., Weill, G. and Verie, C., Proc. 13th Int. Conf. Physics of Semiconductors, edited by Fumi, F.G.,(Roma 1976), p. 476.Google Scholar
30. Mycielski, J., Solid State Commun. (in press).Google Scholar
31. Vaziri, M., Schwarzkopf, D.A. and Reinfenberger, R., Phys. Rev. B31, 3811 (1985).Google Scholar
32. Vaziri, M. and Reifenberger, R., Phys. Rev. B32, 3921 (1985).Google Scholar
33. Gluzman, N.G., Sabirzyanova, L.D., Tsidilkovsky, I.M., Paranchich, L.D. and Paranchich, S.U., Fiz. Tekh. Poluprovodn. 20, 94 (1986).Google Scholar
34. Dietl, T., J. de Phys. (Paris) 39, C6 - 1081 (1978).Google Scholar
35. Dobrowolski, W., Oybko, K., Mycielski, A., Mycielski, J., Wróbel, J., Piechota, S. S., Palczewska, M., Szymczak, H. and Wilamowski, Z., Proc. 18th Int. Conf. Physics of Semiconductors. (Stockholm 1986), in press.Google Scholar
36. Lewicki, A., Tarnawski, Z. and Mycielski, A., Acta Physica PolonicaA67, 357 (1985).Google Scholar
37. Lewicki, A., Mycielski, A. and Spalek, J., Acta Physica Polonica (in press) (1986).Google Scholar
38. Lewicki, A., Spalek, J. and Mycielski, A., J. Phys. C: Solid State Phys. (in press).Google Scholar
39. Low, W. and Weger, M., Phys. Rev. 118, 1119 (1960).Google Scholar
40. Mahoney, J., Lin, C., Brumage, W. and Dorman, F., J. Chem. Phys. 53, 4286 (1970).Google Scholar