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Identification of Interstitial Carbon Related Defects in Silicon

Published online by Cambridge University Press:  26 February 2011

J. L. Benton ,
M. T. Asom ,
R. Sauer  and
L. C. Kimerling
J. L. Benton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M. T. Asom
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. Sauer
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
L. C. Kimerling
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

DLTS measurements are used to detect and identify the interstitial related defects in n-type silicon. The materials dependences of the reactions of the [E(0.12), H(O.27)], [ME(0.30), ME(0.29), ME(0.23), ME(0.21)], ]ME(0.10), ME(0.17)] and [H(0.36)] spectral features lead to their identification as representing the two charge states of Ci, the multistable configurations of Ps-Ci, the bistable Cs-Sii-Cs, and the Ci-Oi defects, respectively. The branching ratios for the reactions of interstitial carbon with the impurities are given.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 85
Copyright
Copyright © Materials Research Society 1988

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Footnotes

*

Present address, Physikalishes Institut, Universitat Stuttgart, D-7000 Stuttgart 80, Pfaffenwaldring 57, Fed. Rep. Germany

References

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