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Hydrogenation Mechanism of Top-Gated Polysilicon Thin Film Transistors

Published online by Cambridge University Press:  15 February 2011

Yong-Min Ha ,
Jung-In Han ,
Chul-Hi Han  and
Choong-Ki Kim
Yong-Min Ha
Affiliation:
Dept. of Electrical Engineering, Korea Advanced Institute of Science and Technology, 373–1 Kusong-Dong Yusong-Gu, Taejon, 305–701, Korea.
Jung-In Han
Affiliation:
Dept. of Electrical Engineering, Korea Advanced Institute of Science and Technology, 373–1 Kusong-Dong Yusong-Gu, Taejon, 305–701, Korea.
Chul-Hi Han
Affiliation:
Dept. of Electrical Engineering, Korea Advanced Institute of Science and Technology, 373–1 Kusong-Dong Yusong-Gu, Taejon, 305–701, Korea.
Choong-Ki Kim
Affiliation:
Dept. of Electrical Engineering, Korea Advanced Institute of Science and Technology, 373–1 Kusong-Dong Yusong-Gu, Taejon, 305–701, Korea.
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Abstract

Hydrogen diffusion paths in top-gated polysilicon thin-film transistors have been investigated by measuring the current-voltage characteristics of the transistors with various sizes after hydrogenation. Hydrogenation has been performed in ECR plasma sysytem. It is noted that hydrogen is introduced through three main paths instead of one predominant path. The hydrogen from different paths affects the device parameters differently.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 135
Copyright
Copyright © Materials Research Society 1994

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