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Hydrogen Density of States Model for Amorphous Silicon and Alloys

Published online by Cambridge University Press:  21 February 2011

R. A. Street
R. A. Street*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

It is proposed that hydrogen reactions near the growing surface control the structure of plasma-deposited amorphous silicon and its alloys. The model explains how the plasma influences the dangling bond density and silicon weak bond distribution, which are the main parameters influencing the electronic properties. The hydrogen interactions account for the dependence of the electronic structure on growth conditions, the transition to microcrystalline growth in hydrogen-rich plasmas, and the different electronic properties of a-Si:H alloys. The proposed growth mechanisms are closely related to the metastability phenomena which occur in bulk a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 253
Copyright
Copyright © Materials Research Society 1991

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References

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