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Hydrogen Adsorption Effects on Thin Film Growth Mode Studied by Ion Scattering

Published online by Cambridge University Press:  21 February 2011

F. ShojiK ,
K. Sumitomo ,
T. Kinoshita ,
Y. Tanaka ,
K. Oura  and
I. Katayama
F. ShojiK
Affiliation:
Faculty of Engineering, Osaka University, Sui ta, Osaka, 565, Japan
K. Sumitomo
Affiliation:
Faculty of Engineering, Osaka University, Sui ta, Osaka, 565, Japan
T. Kinoshita
Affiliation:
Faculty of Engineering, Osaka University, Sui ta, Osaka, 565, Japan
Y. Tanaka
Affiliation:
Faculty of Engineering, Osaka University, Sui ta, Osaka, 565, Japan
K. Oura
Affiliation:
Faculty of Engineering, Osaka University, Sui ta, Osaka, 565, Japan
I. Katayama
Affiliation:
Osaka Institute of Technology, Omiya, Asahiku, Osaka, 535 Japan.
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Abstract

The effects of hydrogen adsorption on the growth process and structures of Ag thin films on Si(111)-7×7 surfaces has been studied. The growth process and film structures are investigated by low energy electron diffraction(LEED) and low energy ion scattering spectroscopy of time of flight mode(TOF-ICISS). The hydrogen adsorbed on the surface is investigated by low energy recoil detection analysis(TOF-ERDA). We have found that Ag thin films deposited onto hydrogen covered Si(111) surfaces grow with a mode definitely different from that on clean surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 381
Copyright
Copyright © Materials Research Society 1992

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References

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