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Hot-Carrier Effects on Optical Properties of GaAs/AlxGai1-xAs Quantum Wells

Published online by Cambridge University Press:  28 February 2011

W.M. Chen ,
P.O. Holtz ,
B. Monemar ,
M. Sundaram ,
J.L. Merz  and
A.C. Gossard
W.M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
P.O. Holtz
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN Present address: Max-Planck-Institut fur Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, FRG.
M. Sundaram
Affiliation:
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106, USA.
J.L. Merz
Affiliation:
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106, USA.
A.C. Gossard
Affiliation:
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106, USA.
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Abstract

We report on a study of hot-carrier effects on optical properties of GaAs/AlxGa1-xAs quantum wells, by photoluminescence (PL) spectroscopy in the presence of a microwave (MW) field. Both doped and undoped, multiple quantum wells (MQWs) and single quantum wells (SQWs), grown by molecular beam epitaxy (MBE), show a profound enhancement of free exciton (FE) and bound exciton (BE) (for the doped wells) PL emissions with MW irradiation. This is attributed to effects of hot-carriers induced by the MW electric field. The mechanism responsible for the strong enhancement in PL intensity of the QWs in the presence of hot-carriers is studied, and is discussed in terms of an enhanced carrier trapping by the QWs as a consequence of the MW-induced heating of the photo-excited free carriers in the AlxGa1-xAs barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 707
Copyright
Copyright © Materials Research Society 1990

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