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Hopping of Electrons in Hybrid Band Tails of a-Si1-x Gex :H

Published online by Cambridge University Press:  25 February 2011

C. E. Nebel ,
H. C. Weller  and
G.H. Bauer
C. E. Nebel
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000-Stuttgart-80, FRG.
H. C. Weller
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000-Stuttgart-80, FRG.
G.H. Bauer
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000-Stuttgart-80, FRG.
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Abstract

The thermalization of electrons in the medium temperature range (120K ≤ T ≤ 200K) is investigated by time-of-flight experiments on a-SiGe:H mim structures. The evaluation of the pre-transit current decay reveals a dual slope characteristic which reflects an initial hopping down (I ∼ t −1) followed by a thermally activated (I ∼ t −p 0 < p < 1) process. The transition time from hopping down to multiple trapping sensitively depends on temperature and alloy composition. The experimentally deduced features can be explained by the increased tail state density at the conduction band mobility edge of a-SiGe:H samples compared to a-Si:H.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 151
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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