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Hollow Cold Cathode Ion Source for Reactive Ion-Beam Etching

Published online by Cambridge University Press:  21 February 2011

A.I. Stognij  and
V.V. Tokarev
A.I. Stognij
Affiliation:
Institute of Solid State and Semiconductor Physics, the BSSR Academy of Sciences, P.Brovka 17, Minsk 220726, USSR
V.V. Tokarev
Affiliation:
Institute of Solid State and Semiconductor Physics, the BSSR Academy of Sciences, P.Brovka 17, Minsk 220726, USSR
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Abstract

A wide-aperture reactive gas ion source has been developed for various ion-beam processings in high vacuum (p < < 5×10−2 Pa). The peculiar feature of the ion source is that two-stage self-maintained low-pressure discharge is used here as a plasma emitter. This provides high operating parameters of the source along with simple diode-type structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 413
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Stognij, A.I., Nikitinskij, V.A., Zhuravlev, B.I., ’Zhurnal Tekhnicheskoj phisiki” 1988, vol.59,No.5, pp.993–995, (USSR).Google Scholar
2 Stognij, A.I., Tokarev, V.V. ( to be published in “Pribory, tekhnika, experiment”, 1990).Google Scholar