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High-Speed Photoconductive Detectors Fabricated in Heteroepitaxial GaAs Layers

Published online by Cambridge University Press:  25 February 2011

G. W. Turner ,
V. Diadiuk ,
H. Q. Le ,
H. K. Choi ,
G. M. Metze  and
B-Y. Tsaur
G. W. Turner
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
V. Diadiuk
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
H. Q. Le
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
H. K. Choi
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
G. M. Metze
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
B-Y. Tsaur
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
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Abstract

Response times of ∼60 and 25 ps (FWHM), respectively, have been measured for photoconductive detectors fabricated in GaAs layers grown by molecular beam epitaxy on silicon substrates and silicon-on-sapphire substrates. Photoconductive detectors, which can be readily combined with GaAs logic devices such as MESFETs to provide high-speed optical to electrical conversion, could be used in optical interconnects that are integrated with Si circuits on monolithic GaAs/Si wafers. Transconductance values of 120 mS/mm have been obtained for MESFET's fabricated in GaAs layers grown on silicon-on-sapphire substrates.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 181
Copyright
Copyright © Materials Research Society 1986

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References

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