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A High-Speed Amorphous-Silicon Dytamic Circuit

Published online by Cambridge University Press:  28 February 2011

H. Okada ,
Y. Nara ,
Y. Uchida ,
Y. Watanabe  and
M. Matsumura
H. Okada
Affiliation:
Department of Physical Electronics, Faculty of Engneering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152, JAPAN
Y. Nara
Affiliation:
Department of Physical Electronics, Faculty of Engneering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152, JAPAN
Y. Uchida
Affiliation:
Department of Physical Electronics, Faculty of Engneering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152, JAPAN
Y. Watanabe
Affiliation:
Department of Physical Electronics, Faculty of Engneering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152, JAPAN
M. Matsumura
Affiliation:
Department of Physical Electronics, Faculty of Engneering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152, JAPAN
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Abstract

A novel dynamic circuit composed of amorphous-silicon Schottkybarrier diodes and field-effect transistors has been proposed. The circuit response time is as short as the discharging time of a load capacitor through the driver transistor. The circuit having 1µm-long, self-aligned transistors has been predicted theoretically to be able to be operated at multi-MHz rates. Preliminary experimental results are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 379
Copyright
Copyright © Materials Research Society 1985

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