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High-Resolution X-Ray Diffraction Analysis of “Devicequality” Cubic GaN Grown on (001)GaAs Substrate Prepared by Atomic-Hydrogen Treatment At “High Temperatures”

Published online by Cambridge University Press:  10 February 2011

A. Yoshikawa ,
Z. X. Qin ,
H. Nagano ,
Y. Sugure ,
A. W. Jia ,
M. Kobayashi ,
M. Shimotomai ,
Y. Kato  and
K. Takahashi
A. Yoshikawa
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
Z. X. Qin
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
H. Nagano
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
Y. Sugure
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
A. W. Jia
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
M. Kobayashi
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
M. Shimotomai
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
Y. Kato
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
K. Takahashi
Affiliation:
Department of Electronics and Information Science, Teikyo University of Science & Technology, 2525 Yatsuzawa, Uenohara, Kitatsurugun, Yamanashi 409-01 Japan
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Abstract

Cubic GaN (c-GaN) layers were grown by if-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at “high temperatures”, and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740°C. It was found that single domain “device-quality” c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70 - 90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680°C could be less than 4×10-3.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 465
Copyright
Copyright © Materials Research Society 1998

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