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High-Resolution Interface Atomic Structure Analysis in Silicon Nitride Ceramics

Published online by Cambridge University Press:  01 February 2011

A. Ziegler ,
J. C. Idrobo ,
M. K. Cinibulk ,
C. Kisielowski ,
N. D. Browning  and
R. O. Ritchie
A. Ziegler
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA Materials Science and Technology Division, Chemistry and Materials Science Directorate, Lawrence Livermore National Laboratory, Livermore, CA 94551, USA
J. C. Idrobo
Affiliation:
Physics Department, University of California, Davis, CA 95616, USA
M. K. Cinibulk
Affiliation:
Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433, USA
C. Kisielowski
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
N. D. Browning
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA Department of Chemical Engineering and Materials Science, University of California, Davis, CA 95616, USA
R. O. Ritchie
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
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Abstract

In this study we examine the immediate interface between matrix grains and the amorphous intergranular film in a Si3N4 ceramic doped with rare-earth oxides La2O3, Sm2O3, Er2O3, Yb2O3 and Lu2O3, extracting unique structural and atomic bonding information. In particular, we relate the structure of the interface to the ionic size and electronic structure of the rare-earth elements and the presence of oxygen in the intergranular film. We relate these results to the measured fracture toughness.

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