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High-pressure investigation of InGan quantum wells.

Published online by Cambridge University Press:  10 February 2011

Piotr Perlin ,
Valentin Iota ,
Bernie A. Weinstein ,
Henryk Teisseyre ,
Tadeusz Suski ,
Steeve Hersee ,
Christian Kisielowskil ,
Eicke R. Weber  and
Jinwei Yang
Piotr Perlin
Affiliation:
Lawrence Berkeley Laboratory and University of California at Berkeley, Berkeley CA 94720.
Valentin Iota
Affiliation:
Physics Department, SUNY at Buffalo.
Bernie A. Weinstein
Affiliation:
Physics Department, SUNY at Buffalo.
Henryk Teisseyre
Affiliation:
High Pressure Research Center, “Unipress”, Warsaw, Poland
Tadeusz Suski
Affiliation:
High Pressure Research Center, “Unipress”, Warsaw, Poland
Steeve Hersee
Affiliation:
CHTM, University of New MexicoUSA
Christian Kisielowskil
Affiliation:
Lawrence Berkeley Laboratory and University of California at Berkeley, Berkeley CA 94720.
Eicke R. Weber
Affiliation:
Lawrence Berkeley Laboratory and University of California at Berkeley, Berkeley CA 94720.
Jinwei Yang
Affiliation:
APA Optics.
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Abstract

We have studied the pressure dependence of photoluminescence for various InGaN quantum wells of different Indium compositions. In contrast to classical quantum well systems such as GaAs/AlGaAs, the pressure coefficients of the photoluminescence peak position of wells of similar parameters can vary greatly, depending on conditions of growth. Generally, the pressure coefficient of the emission peak is much lower than the one predicted for a GaN-InN system. We show that this behavior can be related in most cases to the influence of the thick GaN layer compressibility on the strain in the InGaN quantum wells. However, in some cases (Nichia devices), the pressure coefficient of the emission peak seems to be unrelated to the shift of the energy gap of the material, suggesting the involvement of strongly localized electronic states

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 399
Copyright
Copyright © Materials Research Society 1998

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References

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