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Highly Controllable Nano-texturing of Silicon Using Hydrogen-assisted Reactive Ion Etching

Published online by Cambridge University Press:  01 February 2011

Mahdieh Mehran ,
Zeinab Sanaee  and
Shamsoddin Mohajerzadeh
Mahdieh Mehran
Affiliation:
m.mehran@ece.ut.ac.ir, University of Tehran, ECE, Tehran, Iran, Islamic Republic of
Zeinab Sanaee
Affiliation:
z.sanaee@ece.ut.ac.ir, University of Tehran, ECE, Tehran, Iran, Islamic Republic of
Shamsoddin Mohajerzadeh
Affiliation:
mohajer@ut.ac.irmohajerzadehh@yahoo.com, University of Tehran, ECE, Iran, Tehran, North Kargar Ave., Faculty of eng., Tehran, 1439957131, Iran, Islamic Republic of
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Abstract

We propose a hydrogen assisted reactive ion etching method for generating nano-grass and nano-texturing of silicon substrates in desirable shapes and locations. The etching technique is based on sequential etching and passivation steps where a combination of three gases of H2, O2 and SF6 in the presence of RF plasma is exploited. Using this method it has been possible to realize high aspect ratio features on silicon substrates whereas by adjusting the etching parameters, it is possible to form texturing of silicon in desired places. This technique is highly programmable where the pressure, gas flows, plasma power and duration of each cycle can be preset to achieve desired features. The formation of nano-grass on the silicon surface improves its wetability both to water and oil spills.

Keywords

nanostructureporosityreactive ion etching
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1258: Symposia P/Q/R – Low-Dimensional Functional Nanostructures-Fabrication, Characterization and Applications , 2010 , 1258-Q07-07
Copyright
Copyright © Materials Research Society 2010

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References

1 Engelhart, P. Harder, N. P. Grischke, R. Merkle, A. Meyer, R. Brendel, R. “Laser structuring for back junction silicon solar cells,” Progress in Photovoltaics: Research and Applications, 15, 237, (2007).Google Scholar
2 Path, P. Wileke, G. Bucher, E. Szlufcic, J. Murti, R.M. K. De Clercq, Nijs, J. Mertens, R. Proc. 24th IEEE Photovoltaic Specialist Conf., (1994), Waikoloa, Hawaii.Google Scholar
3 Won, C. W. Nersisyan, H.H. Shin, C. Y. Lee, J. H. “Porous silicon microparticles synthesis by solid flame technique,” Microporous and Mesoporous Materials, 126, 166, (2009).Google Scholar
4 Betty, C. A. “Highly sensitive capacitive immunosensor based on porous siliconpolyaniline structure: Bias dependence on specificity,” Biosensors and Bioelectronics, 25, 338, (2009).Google Scholar
5 Tsujino, K. Matsumura, M. Nishimoto, Y. “Texturization of multicrystalline silicon wafers for solar cells by chemical treatment using metallic catalyst,” Solar Energy Materials and Solar Cells, 90, 100, (2006).Google Scholar
6 Givant, A. Shappir, J. Sa'ar, A., “Porous silicon on insulator: a new approach to fabricate porous silicon based optoelectronic devices,” Physica Status Solidi (A) Applied Research, 182, 419, (2000).Google Scholar
7 de Boer, M. J., Gardeniers, J. G. E. Jansen, H. V. Smulders, E. M.-Gilde, J. Roelofs, G. Sasserath, J. N. and Elwenspoek, M. “Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures,” J. Microelectromech. Syst., 11, 385, (2002).Google Scholar
8 Murakami, K. Wakabayashi, Y. Minami, K. and Esashi, M. “Cryogenic dry etching for high aspect ratio microstructures,” Proc. IEEE MEMS Conf., (1993); Florida, Untied States. Google Scholar
9 Mohajerzadeh, S. et al. , “Deep vertical etching of Si wafers using a hydrogenationassisted reactive ion etching,” IEEE JMEMS, 16, 912, (2007).Google Scholar
10 Zehfroosh, N. Shahmohammadi, M. and Mohajerzadeh, S. “High Sensitivity Ion-Selective Field Effect Transistors using Nano-Porous Silicon” to appear in IEEE Electron Device Letters.Google Scholar