We present a study of the optoelectronic and structural properties of a-Si:H deposited by Hot-Wire chemical vapor deposition (HW-CVD) from SiH 4 and H 2 at “Medium” (T fil ≃ 1500°C) and “high” (T fil ≃ 1900 °C) filament temperatures. For each tungsten filament temperature regime, the following deposition parameters are varied: (i) pressure (p ∼ 10−2 — 0.5 Torr); (ii) substrate temperature (T sub ∼ 180 — 270 °C); (iii) silane flow rate (F siH4 ∼ 1 — 10 ccm) and (iv) hydrogen flow rate (F H2 ∼ 0 — 10 seem). Films deposited at T fil ∼ 1900 °C in a low pressure regime (p ∼ 2.7 × 10−2Torr) using flows of 5 sccm for both H 2 and SiH 4 had high deposition rates (r d ∼ 8 Ås−1). These films showed an optical bandgap, E9 Tauc ≃ 1.7 eV, a dark conductivity σd ∼ 10−8Scm −1 with an activation energy E α,σd ≃ 0.8 eV, and photoconductivity σph ≥ 10−5Scm −1 (σph ∼ 10−5). Films deposited at Tju = 1500 °C and p ≃ 0.3 Torr, showed 1.7 < E9 Tauc < 2 eV, 10−5 < σd < 10−3Scm −1, 0.2 < E α,σ d < 0.5 eV and σph /Σd < 102. For the same T fit and p ∼ 3 × 10−2 — 0.1 Torr, the films show 1.7 < E9 Tauc < 2 eV, 10−3 < Σd < 10−1Scm −1 and σph /σd < 1. Films deposited using molybdenum and rhenium filaments at T fil ≃ 1900 °C show E9 Tauc ≃ 1.7 eV and σd ∼ σph ∼ 10−7Scm −1