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High Silicon Self-Interstitial Diffusivity as Revealed by Lithium Ion Drifting

Published online by Cambridge University Press:  15 February 2011

W. B. Knowlton ,
J. T. Walton ,
Y. K. Wong ,
I. A. Mason  and
E. E. Haller
W. B. Knowlton
Affiliation:
Lawrence Berkeley National Laboratory andUniversity of California, Berkeley, CA 94720, USA, knowlton@mhl.lbl.gov Department of Materials Science & Mineral Engineering, University of California, Berkeley, CA 94720, USA, knowlton@mhl.lbl.gov
J. T. Walton
Affiliation:
Lawrence Berkeley National Laboratory andUniversity of California, Berkeley, CA 94720, USA, knowlton@mhl.lbl.gov
Y. K. Wong
Affiliation:
Lawrence Berkeley National Laboratory andUniversity of California, Berkeley, CA 94720, USA, knowlton@mhl.lbl.gov
I. A. Mason
Affiliation:
Lawrence Berkeley National Laboratory andUniversity of California, Berkeley, CA 94720, USA, knowlton@mhl.lbl.gov
E. E. Haller
Affiliation:
Lawrence Berkeley National Laboratory andUniversity of California, Berkeley, CA 94720, USA, knowlton@mhl.lbl.gov Department of Materials Science & Mineral Engineering, University of California, Berkeley, CA 94720, USA, knowlton@mhl.lbl.gov
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Abstract

We report on the use of lithium ion (Li+) drifting1 as a sensitive means to study Si self-interstitial (SiI) diffusion.2 Li+ properties in silicon are well known from extensive ion drift studies and Li+ interactions with dopants and point defects.3 We have used this low temperature (∼100°C) technique in combination with Si1 injection from oxides to delineate, identify and eliminate D defects4 in certain p-type floating zone (FZ) Si single crystals.5 Our results suggest Si1 diffusion occurs to a depth of at least 10 mm into the bulk during phosphorus (P) diffusion with oxidation (i.e., POCI3 process) at 950°C for 100 min. Process modeling of this lower bound SiI diffusion using SUPREM-IV9 results in a Sii diffusivity of 3.5×10−6 cm2/s at 950°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 77
Copyright
Copyright © Materials Research Society 1997

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References

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