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High Resolution X-Ray Scattering Studies of Strain in Epitaxial Thin Films of Yttrium Silicide Grown on Silicon(111)

Published online by Cambridge University Press:  28 February 2011

L. J. Martinez-Miranda ,
M. P. Siegal ,
P. A. Heiney ,
J. J. Santiago-Aviles  and
W. R. Graham
L. J. Martinez-Miranda
Affiliation:
Laboratory for Research on the Structure of Matter. Department of Electrical Engineering
M. P. Siegal
Affiliation:
Laboratory for Research on the Structure of Matter. Department of Materials Science and Engineering
P. A. Heiney
Affiliation:
Laboratory for Research on the Structure of Matter. Department of Physics University of Pennsylvania, Philadelphia, PA 19104
J. J. Santiago-Aviles
Affiliation:
Laboratory for Research on the Structure of Matter. Department of Electrical Engineering
W. R. Graham
Affiliation:
Laboratory for Research on the Structure of Matter. Department of Materials Science and Engineering
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Abstract

We have used high resolution grazing incidence x-ray scattering (GIXS) to study the in-plane and out-of-plane structure of epitaxial YSi2-x films grown on Si (111), with thicknesses ranging from 85Å to 510Å. Our results indicate that the films are strained, and that film strain increases as a function of thickness, with lattice parameters varying from a = 3.846Å/c = 4.142Å for the 85Å film to a = 3.877Å/c = 4.121Å for the 510Å film. We correlate these results with an increase in pinhole areal coverage as a function of thickness. In addition, our measurements show no evidence for the existence of ordered silicon vacancies in the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 287
Copyright
Copyright © Materials Research Society 1990

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References

1Segmüller, A., Thin Solid Films, 154, 33 (1987).Google Scholar
2Siegal, M.P., Kaatz, F.H., Graham, W.R., Santiago-Avilés, J.J. and Van der Spiegel, J., J. Appl. Phys. 66, 2999 (1989) .Google Scholar
3Knapp, J.A. and Pieraux, S.T., Appl. Phys., 48, 466 (1987).Google Scholar
4Baglin, J.E.E., d’Heurle, F.M. and Petersson, C.S., J. Appl. Phys., 52, 2841 (1981).Google Scholar
5Gurvitch, M., Levi, A.F.J., Tung, R.T. and Nakahara, S., Appl. Phys. Lett., 51, 311 (1987).Google Scholar
6Prutton, M., Surface Physics, Clarendon Press, Oxford, (1984) .Google Scholar
7Siegal, M.P., Graham, W.R. and Santiago-Avilés, J.J., submitted to J. Appl. Phys.Google Scholar
8Marra, W.C., Eisenberger, P. and Cho, A.Y., J. Appl. Phys., 50, 6927 (1979).Google Scholar
9Ishizaki, A. and Shiraki, Y., J. Electrochem. Soc, 133, 666 (1986) .Google Scholar
10Baglin, J.E., d’Heurle, F.M. and Petersson, C.S., Appl. Phys. Lett., 36, 594 (1980).Google Scholar
11Hamann, D.R., Phys. Rev. Lett., 60, 313 (1988).Google Scholar
12Tung, R.T. and Batstone, J.L., Appl. Phys. Lett, 52, 1611 (1988).Google Scholar