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High Resolution X-ray Diffraction from Epitaxial Gallium Nitride Films

Published online by Cambridge University Press:  10 February 2011

T. Lafford ,
N. Loxley  and
BK Tanner
T. Lafford
Affiliation:
Bede Scientific, Bowburn, Durham, DH6 5PF, U.K
N. Loxley
Affiliation:
Bede Scientific, Bowburn, Durham, DH6 5PF, U.K
BK Tanner
Affiliation:
also Department of Physics, Durham University, South Road, Durham, DHI 3LE, U.K.
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Abstract

The width of double axis X-ray rocking curves of epitaxial GaN layers is shown to be critically dependent on the width of the detector aperture. We show that triple axis diffraction measurements using a crystal analyser before the detector enables the instrument function to be defined and the tilt and dilation distributions separated. All GaN samples examined showed a mosaic structure of misoriented sub-grains with little dilation within the mosaic blocks. In reciprocal space maps this was revealed as a wide distribution of intensity in a direction perpendicular to the reciprocal lattice vector.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 483
Copyright
Copyright © Materials Research Society 1997

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References

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