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High Resolution Etching of Gaas and Cds Crystals*

Published online by Cambridge University Press:  15 February 2011

D. V. Podlesnik ,
H.H. Gilgen ,
R.M. Osgood ,
A. Sanchez  and
V. Daneu
D. V. Podlesnik
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
H.H. Gilgen
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
R.M. Osgood
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
A. Sanchez
Affiliation:
MIT Lincoln Laboratory, Lexington, MA 02173
V. Daneu
Affiliation:
MIT Lincoln Laboratory, Lexington, MA 02173
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Abstract

Submicrometer gratings have been etched in GaAs and CdS crystals which have been immersed in an oxidizing etch and illuminated with interferring laser beams. A resolution of 170 nm was obtained. At high laser intensity and with prolonged etching time the surface properties of the material are degraded. The use of in-situ optical measurements of grating parameters allows ready optimization of the grating fabrication process.

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Footnotes

*

This work was supported by the Defense Advanced Research Projects Agency and the Air Force Office of Scientific Research.

References

REFERENCES

1. Tien, P.K., Rev. Mod Phys., 49, 361 (1977).Google Scholar
2. Yariv, A. and Nakamura, H., IEEE J. Quantum Electron, QE–13, 233 (1977).Google Scholar
3. Williams, R.C., Smith, H. I., Elect. Lett. 8, 401 (1972).CrossRefGoogle Scholar
4. Sakaki, H., Wagatsuma, K., Hamasaki, J., and Saito, S., Thin Solid Films, 36, 497 (1976).Google Scholar
5. Shank, C.V. and Schmidt, R.V., Appl. Phys. Lett. 23, 154 (1973).CrossRefGoogle Scholar
6. Smith, H.I., Proc. of the IEEE, 1361 (October 1974).Google Scholar
7. Osgood, R.M., Sanchez-Rubio, A., Ehrlich, D.J., and Daneu, V., Appl. Phys. Lett. 40, 391 (1982).Google Scholar
8. Ida, S. and Ito, K., J. Electrochem. Soc. 118, 768 (1971).Google Scholar
9. Poekrand, I. and Raether, H., Opt. Commun. 18, 395 (1976).Google Scholar