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Published online by Cambridge University Press: 21 March 2011
We report the growth, fabrication and characterization of back-illuminated AlGaN p-i-n photodetectors operating in the solar-blind wavelength range. A peak external quantum efficiency (EQE) of 45.5% (0.1A/W) was obtained at a wavelength of 270 nm. This EQE was obtained at zero volt bias and without the use of any anti-reflection coating on the back of the substrate. To our knowledge, this is the highest EQE reported to date for p-i-n photodetectors operating in the solar-blind wavelength range.