Hostname: page-component-7857688df4-qtpdn Total loading time: 0 Render date: 2025-11-18T10:41:15.277Z Has data issue: false hasContentIssue false
  • English
  • Français

High Quality Gate Insulator for Very-Low Temperature Poly-Si TFT Employing Nitrous Oxygen Plasma Pre-Treatment

Published online by Cambridge University Press:  17 March 2011

Moon Young Shin ,
Sang-Myeon Han ,
Min-Cheol Lee ,
Hee-Sun Shin ,
Min-Koo Han ,
Jang-Yeon Kwon  and
Takashi Noguchi
Moon Young Shin
Affiliation:
School of Electric Engineering and Computer Science (#50), Seoul National University San 56-1, Shinlim-Dong, Kwanak-Ku, Seoul, 151-742, Korea
Sang-Myeon Han
Affiliation:
School of Electric Engineering and Computer Science (#50), Seoul National University San 56-1, Shinlim-Dong, Kwanak-Ku, Seoul, 151-742, Korea
Min-Cheol Lee
Affiliation:
School of Electric Engineering and Computer Science (#50), Seoul National University San 56-1, Shinlim-Dong, Kwanak-Ku, Seoul, 151-742, Korea
Hee-Sun Shin
Affiliation:
School of Electric Engineering and Computer Science (#50), Seoul National University San 56-1, Shinlim-Dong, Kwanak-Ku, Seoul, 151-742, Korea
Min-Koo Han
Affiliation:
School of Electric Engineering and Computer Science (#50), Seoul National University San 56-1, Shinlim-Dong, Kwanak-Ku, Seoul, 151-742, Korea
Jang-Yeon Kwon
Affiliation:
Samsung Advanced Institute of Technology, MD Lab, Ki-Heung Eup, Yong-In, Kyoung-Ki Do, Korea, Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail : myshin@emlab.snu.ac.kr
Takashi Noguchi
Affiliation:
Samsung Advanced Institute of Technology, MD Lab, Ki-Heung Eup, Yong-In, Kyoung-Ki Do, Korea, Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail : myshin@emlab.snu.ac.kr
Get access

Abstract

We have proposed nitrous oxide (N2O) plasma pre-treatment in order to reduce the oxide charge densities as well as to increase the breakdown field of silicon dioxide film for flexible display. Our experimental results show that the proposed treatment improved both the flat-band voltage from –3V to –1.8V and the breakdown voltage of gate oxide from 7MV/cm to 9.5MV/cm, respectively. The proposed treatment also improved poly-Si TFT characteristics such as low sub-threshold swing of 0.43V/dec.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 814: Symposium I – Flexible Electronics 2004-Materials and Device Technology , 2004 , I7.9
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Theiss, S. D., Carey, P. G., Smith, P. M., Wickboldt, P., Sigmon, T. W., Tung, Y. J., King, T.-J., IEDM 98, p.257∼p. 260Google Scholar
[2] Gosain, D.P., Noguchi, T., Usui, S., Jpn. J. Appl. Phys., Vol.39 (2000), pp.L179∼L181 Google Scholar
[3] Young, N.D., French, I.D., Trainor, M. J., Murley, D. T., McCulloch, D. J., Wilks, R. W., IDW 99, p.219∼222 Google Scholar
[4] Tung, Yehi-Jiun, Carey, Paul G., Smith, Patrick M., Thesis, Steven D., Davis, Gary A., Aebi, Verle and King, Tsu-Jae, Tech. Digest of SID 1998, Anaheim, USA, pp.887–890, 1998.Google Scholar
[5] Lee, M. C., Han, S. M., Kang, S. H., Shin, M. Y. and Han, M. K., IEDM 03,pp.215–218 Google Scholar
[6] Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., Physical review letters, vol. 87, No. 16, pp.165506, 2001 Google Scholar
[7] Tuttle, Blair, Walle, Chris G. Van de, Physical review B, Vol. 59, No. 20, pp.12884–12889, 1999 Google Scholar