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High Purity Silicon Amido Precursors for Low Temperature Cvd of High к Gate Silicates

Published online by Cambridge University Press:  01 February 2011

A.S. Borovik ,
C. Xu ,
B. C. Hendrix ,
J. F. Roeder  and
T. H. Baum
A.S. Borovik
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
C. Xu
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
B. C. Hendrix
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
J. F. Roeder
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
T. H. Baum
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
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Abstract

High purity silicon amido precursors provide a route to low temperature CVD of silicate gate dielectrics. We have developed a straightforward synthetic method for the production of high purity Si[N(CH3)2]4, Si(NMeEt)4, HSi(NEtMe)3 and HSi(NEt2)3 in high yield. These compounds were fully characterized by NMR, GC/MS, ICP-MS, ICchlorine, and elemental analysis. Their solution compatibility with an Hf amide source was also examined by chemical techniques. Low temperature CVD of metal silicate films is also demonstrated.

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References

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