Hostname: page-component-54dcc4c588-m259h Total loading time: 0 Render date: 2025-10-06T09:46:47.563Z Has data issue: false hasContentIssue false
  • English
  • Français

High Purity Silicon Amido Precursors for Low Temperature Cvd of High к Gate Silicates

Published online by Cambridge University Press:  01 February 2011

A.S. Borovik ,
C. Xu ,
B. C. Hendrix ,
J. F. Roeder  and
T. H. Baum
A.S. Borovik
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
C. Xu
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
B. C. Hendrix
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
J. F. Roeder
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
T. H. Baum
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email: aborovik@atmi.com
Get access

Abstract

High purity silicon amido precursors provide a route to low temperature CVD of silicate gate dielectrics. We have developed a straightforward synthetic method for the production of high purity Si[N(CH3)2]4, Si(NMeEt)4, HSi(NEtMe)3 and HSi(NEt2)3 in high yield. These compounds were fully characterized by NMR, GC/MS, ICP-MS, ICchlorine, and elemental analysis. Their solution compatibility with an Hf amide source was also examined by chemical techniques. Low temperature CVD of metal silicate films is also demonstrated.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Wilk, G.D., Wallace, R.M., Anthony, J.M., J. Appl. Phys. 5243, 5243 (2001).Google Scholar
[2] See for example, Anderson, H.H., J. Am. Chem. Soc., 1421, 1421 (1952).Google Scholar
[3] Aylett, B.J. and Peterson, L.K., J. Chem. Soc., 3429 (1964).Google Scholar
[4] Kannengiesser, G. and Damm, F., Bull. Soc. Chim. Fr., 2492 (1967).Google Scholar
[5] R.G Gordon, Hoffman, D.M., and Riaz, U., Chem. Mater., 2, 480, (1990).Google Scholar
[6] Wan, Y. and Verkade, J.G., J. Am. Chem. Soc., 117, 141, (1995).Google Scholar
[7] Hendrix, B.C., Borovik, A.S., Wang, Z., Xu, C., Roeder, J.F., Baum, T. H., Bevan, M.J., Visokay, M.R., and Chambers, J.J., Appl. Phys. Lett., (2002), in press.Google Scholar
[8] Hendrix, B.C., Borovik, A.S., Wang, Z., Xu, C., Roeder, J.F., Baum, T. H., Bevan, M.J., Visokay, M.R., Chambers, J.J., Rotondaro, A.L.P., Bu, H., and Colombo, L. in Silicon Materials-Processing, Characterization, and Reliability, edited by Veteran, J.L., Ho, P.S., O'Meara, D., and Misra, V., (Mater. Res. Soc. Proc., 2002, submitted, paper B6.7).Google Scholar