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High Performances of Low Temperature (≤ 600°C) Unhydrogenated Polysilicon Thin Film Transistors

Published online by Cambridge University Press:  15 February 2011

L. Pichon ,
F. Raoult ,
K. Mourgues  and
O. Bonnaud
L. Pichon
Affiliation:
Groupe de Microélectronique et Visualisation, URA au CNRS 1648, Université de RENNES I, Campus de Beaulieu, 35 042 RENNES.
F. Raoult
Affiliation:
Groupe de Microélectronique et Visualisation, URA au CNRS 1648, Université de RENNES I, Campus de Beaulieu, 35 042 RENNES.
K. Mourgues
Affiliation:
Groupe de Microélectronique et Visualisation, URA au CNRS 1648, Université de RENNES I, Campus de Beaulieu, 35 042 RENNES.
O. Bonnaud
Affiliation:
Groupe de Microélectronique et Visualisation, URA au CNRS 1648, Université de RENNES I, Campus de Beaulieu, 35 042 RENNES.
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Abstract

Low temperature unhydrogenated polysilicon thin film transistors are elaborated through a fourmask gate aluminium process. Temperature process does not exceed 600°C. Active layer is made of undoped polysilicon layer, an in-situ phosphorus polysilicon layer constitutes source and drain windows and a SiO2 APCVD layer ensures gate insulation. The transistors exhibit electrical properties as good as in the case of hydrogenated ones: a low threshold voltage (VT = 4–5 V), an acceptable optimum field effect mobility (≅ 42 cm2/Vs), a high On/Off state switching, and a high On/Off state current ratio (≅ 107) for a drain voltage equal to 1 V.

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