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High Electron Mobility Transistors with Optically Processed Refractory Silicide Metallizations: Thermal and Microwave Analysis

Published online by Cambridge University Press:  26 February 2011

P. F. Tang ,
M. S. Fan  and
A. A. Illiadis
P. F. Tang
Affiliation:
Aris Christem, Electronics Packaging Research Center, University of Maryland, College Park, MD.
M. S. Fan
Affiliation:
Aris Christem, Electronics Packaging Research Center, University of Maryland, College Park, MD.
A. A. Illiadis
Affiliation:
Aris Christem, Electronics Packaging Research Center, University of Maryland, College Park, MD.
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Abstract

The enhanced high temperature gate metallizations consisting of sputtered TiWSi or TiWN were investigated in order to attain high temperature stability at temperatures in excess of 250°C. The TiWN/Au system resulted in a sheet resistance of only 11.5 mΩ/□ while TiWSi/Au resulted in 75.0 mΩ/□. The HEMTs and FETs processed with additional stable ohmic contacts of epitaxial Ge/Pd structures exhibited a stable transconductance of 160 -180 mS/mm at temperatures of 300°C. Thermal analysis indicated the peak junction temperature increase with an input power of 200mW to be less than 18°C at substrate temperature of 60°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 549
Copyright
Copyright © Materials Research Society 1992

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References

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