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High Deposition Rate Pecvd Processes For Next Generation Tft-Lcds

Published online by Cambridge University Press:  15 February 2011

J. F. M. Westendorp ,
H. Meiling ,
J. D. Pollock ,
D. W. Berrian ,
A. H. Laflamme Jr. ,
J. Hautala  and
J. Vanderpot
J. F. M. Westendorp
Affiliation:
TEL America, Inc., 123 Brimbal Avenue, Beverly, MA 01915, USA.
H. Meiling
Affiliation:
TEL America, Inc., 123 Brimbal Avenue, Beverly, MA 01915, USA.
J. D. Pollock
Affiliation:
TEL America, Inc., 123 Brimbal Avenue, Beverly, MA 01915, USA.
D. W. Berrian
Affiliation:
TEL America, Inc., 123 Brimbal Avenue, Beverly, MA 01915, USA.
A. H. Laflamme Jr.
Affiliation:
TEL America, Inc., 123 Brimbal Avenue, Beverly, MA 01915, USA.
J. Hautala
Affiliation:
TEL America, Inc., 123 Brimbal Avenue, Beverly, MA 01915, USA.
J. Vanderpot
Affiliation:
TEL America, Inc., 123 Brimbal Avenue, Beverly, MA 01915, USA.
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Abstract

The demand for lower cost per panel in TFT-LCD production is driving the PECVD market to deposition systems that combine high throughput and uptime with high yield. Today it is generally believed that a multichamber system that combines a number of single-panel deposition chambers is the best way to achieve these goals.

For these PECVD systems to be economical, the deposition rate of a-Si:H, SiNx and SiO2 has to be in the 1200–1500 Å/min range. In 13.56 MHz parallel-plate glow discharge systems SiNx and SiO2 deposition rates exceeding 1500 Å/min are commonly achieved, whereas the deposition rate of a-Si:H is limited to 100–200 Å/min due to powder formation. Over the last 5 years significant progress has been made to increase the deposition rate of a-Si:H. Methods include the use of very-high-frequency glow discharge (VHF-GD) and pulsing of the rf discharge. However, substrate sizes never exceeded 100mm×100mm.

We have developed a multichamber PECVD system for TFT-LCD production where VHFGD is used to obtain uniform high deposition rates for (doped) semiconductors and insulators, such as a-Si:H, n+ a-Si:H, SiNx and SiO2 over areas as large as 470mm×370mm. Even at deposition rates well above 1200 Å/min hydrogen in a-Si:H is exclusively bound as monohydride. The optoelectronic properties of the films are at least as good as those of their 13.56 MHz counterparts and thus good-quality TFTs can be obtained. At the same time the number of added particles is low allowing for high production yields.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 175
Copyright
Copyright © Materials Research Society 1994

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