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High Current Implantation of Negative Copper Ions into Silica Glasses

Published online by Cambridge University Press:  03 September 2012

N. Kishimoto ,
V. T. Gritsyna ,
K. Kono ,
H. Amekura  and
T. Saito
N. Kishimoto
Affiliation:
National Research Institute for Metals, Tsukuba, Ibaraki 305, Japan, kishin@nrim.go.jp
V. T. Gritsyna
Affiliation:
Kharkov State University, Kharkov 310077, Ukraine
K. Kono
Affiliation:
National Research Institute for Metals, Tsukuba, Ibaraki 305, Japan, kishin@nrim.go.jp
H. Amekura
Affiliation:
National Research Institute for Metals, Tsukuba, Ibaraki 305, Japan, kishin@nrim.go.jp
T. Saito
Affiliation:
National Research Institute for Metals, Tsukuba, Ibaraki 305, Japan, kishin@nrim.go.jp
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Abstract

High- current implantation of Cu- ions into silica glasses has been demonstrated using mAclass negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 μA/cm2. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam- induced surface plasma may affect the high current implantation.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 435
Copyright
Copyright © Materials Research Society 1997

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