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HgTe-CdTe Superlaltice and HgCdTe Epilayer Device Structures Grown by Photon-Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

T.H. Myers ,
R.W. Yanka ,
L.M. Mohnkern ,
K.A. Harris ,
D.W. Dietz ,
G.K. Dudoff ,
K.M. Girouard  and
S.C.H. Wang
T.H. Myers
Affiliation:
Electronics Laboratory, GE Company, Syracuse, New York 13221
R.W. Yanka
Affiliation:
Electronics Laboratory, GE Company, Syracuse, New York 13221
L.M. Mohnkern
Affiliation:
Electronics Laboratory, GE Company, Syracuse, New York 13221
K.A. Harris
Affiliation:
Electronics Laboratory, GE Company, Syracuse, New York 13221
D.W. Dietz
Affiliation:
Electronics Laboratory, GE Company, Syracuse, New York 13221
G.K. Dudoff
Affiliation:
Electronics Laboratory, GE Company, Syracuse, New York 13221
K.M. Girouard
Affiliation:
Electronics Laboratory, GE Company, Syracuse, New York 13221
S.C.H. Wang
Affiliation:
Electronics Laboratory, GE Company, Syracuse, New York 13221
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Abstract

HgCdTe grown by photon-assisted molecular beam epitaxy is now suitable for use in high performance detector fabrication. These are the preliminary results for infrared detectors which have been fabricated in HgCdTe grown using this technique at GE. The detectors were fabricated using a modified Hg-diffused diode process. In addition, the first high quantum efficiency infrared detectors based on the HgTe-CdTe superlattice material system is presented as an example of the sophisticated structures obtainable with photon-assisted molecular beam epitaxy. The superlattice detectors exhibited quantum efficiencies as large as 66% (at 140K) at the peak wavelength of 4.9μm and an average quantum efficiency over the 3–5μm waveband of 55%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 17
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Harris, K.A., Myers, T.H., Yanka, R.W., Mohnkern, L.M. and Otsuka, N.. Proceedings of the 1990 Workshop on the Physics and Chemistry of HgCdTe and Related Materials (to be published in J. Vac. Sci. Technol. A.)Google Scholar
2. Arias, J.M., Shin, S.H., Zandian, M., Pasko, J.G. and DeWames, R.E., Proceedings of the 1990 Workshop on the Physics and Chemistry of HgCdTe and Related Materials (to be published in J. Vac. Sri. Technol. A.)Google Scholar
3. Koestner, R.J., Goodwin, M.W. and Schaake, H.F., Proceedings of the 1990 Workshop on the Physics and Chemistry of HgCdTe and Related Materials (to be published in J. Vac. Sci. Technol. A.)Google Scholar
4. Koestner, R.J. and Schaake, H.F.. J. Vac. Sri. Technol. A, 6, 2834 (1988).Google Scholar
5. Myers, T.H., Yanks, R.W., Harris, K.A., Reisinger, A.R., Han, J., Hwang, S., Yang, Z., Giles, N.C., Cook, J.W. Jr., Schetzina, J.F., Green, R.W., and McDevitt, S.. J. Var. Sri. Technol. A, 27 300 (1989).CrossRefGoogle Scholar
6. Yanka, R.W., Harris, K.A., Mohnkern, L.M. and Myers, T.H., Proceedings of the Sixth International Conference on Molecular Beam Epitaxy (to be published in J. Crys. Growth.)Google Scholar
7. Societe Anonyme De Telecommunications [SAT], Paris, France.Google Scholar
8. Han, J.W., Hwang, S., Lansari, Y., Harper, R.L., Yang, Z., Giles, N.C., Cook, J.W. Jr., and Schetzina, J.F.. J. Vac. Sri. Technol. A, 305 (1989).Google Scholar