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Heterojunction, Vacuum-Glass Field Effect Transistors

Published online by Cambridge University Press:  01 February 2011

Michael W. Geis ,
Sandra Deneault ,
Keith E. Krohn ,
Michael Marchant ,
David L. Cooke  and
Theodore M. Lyszczarz
Michael W. Geis
Affiliation:
SPANOS@LL.MIT.EDU, MIT Lincoln Laboratory, Submicrometer Technology, 244 Wood St., Lexington, MA, 02420, United States, 781-981-4658, 781-981-4983
Sandra Deneault
Affiliation:
deneault@ll.mit.edu, MIT Lincoln Laboratory, Submicrometer Technology, United States
Keith E. Krohn
Affiliation:
krohn@ll.mit.edu, MIT Lincoln Laboratory, Submicrometer Technology, United States
Michael Marchant
Affiliation:
marchant@ll.mit.edu, MIT Lincoln Laboratory, Submicrometer Technology, United States
David L. Cooke
Affiliation:
David.Cooke@hanscom.af.mil, U.S. Air Force Research Laboratory, United States
Theodore M. Lyszczarz
Affiliation:
tedl@ll.mit.edu, MIT Lincoln Laboratory, Submicrometer Technology, United States
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Abstract

This note reports on a surface field effect transistor, SFET, where the electron channel consists of the interface between vacuum and a Cs-doped glass, and an electrode on the back of the glass substrate is used as the gate. The device has a transconductance of 4×10−10 S cm−1. The transconductance is limited by the glass surface roughness, ∼ 0.4 nm RMS. A reduction of surface roughness to 0.1 nm RMS is expected to increase device transconductance.

Keywords

field emissionsurface chemistrydiamond
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE07-11
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Grimes, C. C., Surf. Sci. 73, 379–395 (1978).10.1016/0039-6028(78)90517-4Google Scholar
2. Osgood, R. M., and Wang, X., Solid State Phys. 51, 2–78 (1998).Google Scholar
3. Steinmann, W., Phys. Status Solidi B 192, 339–356 (1995).Google Scholar
4. Mehrotra, R., Guo, C. J., Ruan, Y. Z., Mast, D. B., and Dahn, A. J., Phys. Rev. B 29, 5239–5242 (1984).10.1103/PhysRevB.29.5239Google Scholar
5. Zav'yalov, V. V., Smol'yaninov, I. I., Zotova, E. A., Borodin, A. S., and Bogomolov, S. G., J. Low Temp. 138, 415–420 (2005).Google Scholar
6. Geis, M. W., Deneault, S., Krohn, K. E., Marchant, M., Cooke, D. L., and Lyszczarz, T. M., Appl. Phys. Lett. 87, 192115 (2005).10.1063/1.2130382Google Scholar
7. Okano, K., Koizumi, S., Silva, S. R. P., and Amaratunga, G. A., Nature 381, 140–141 (1996).Google Scholar
8. Zhu, W., Bower, C., Zhou, O., Kochanski, G., and Jin, S., Appl. Phys. Lett. 75, 873–875 (1999).10.1063/1.124541Google Scholar
9. Platzman, P. M. and Dykman, M. I., Science 284, 1967–1969 (1999).Google Scholar
10. Zav'yalov, V. V. and Smol'yaninov, I. I., Sov. Phys. JETP 67, 171–176 (1988).Google Scholar
11. Levinson, I. B., Sov. Phys. JETP 68, 395–401 (1989).Google Scholar
12. Kajita, F. K., Surf. Sci. 142, 86–95 (1984).10.1016/0039-6028(84)90290-5Google Scholar
13. Geis, M. W., Gregory, J. A., and Pate, B. B., IEEE Trans. Electron Devices, 38, 619–626 (1991).10.1109/16.75174Google Scholar
14. Himpsel, F. J., Knapp, J. A., VanVechten, J.A., and Eastman, D. E., Phys. Rev. B 20, 624–627 (1979).10.1103/PhysRevB.20.624Google Scholar
15. Dinh, L. N., McLean, W. II, Schildbach, M. A., and Balooch, M., Phys. Rev. B 59, 15513–15522 (1999).10.1103/PhysRevB.59.15513Google Scholar
16. Geis, M.W., Twichell, J.C., Macaulay, J., and Okano, K., Appl. Phys. Lett. 67, 1328–1330 (1995).Google Scholar
17. Albrecht, U. and Leiderer, P., Surf. Sci. 283, 423–426 (1993).Google Scholar
18. Klier, J., Doicescu, I., and Leiderer, P., J. of Low Temp. 121, 603–608 (2000).Google Scholar
19. Dittmer, G., Thin Solid Films 9, 317–328 (1972).10.1016/0040-6090(72)90122-8Google Scholar