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Heterogeneous Nucleation of Spatially Coherent Damage Structures in Crystalline Silicon with Picosedcond 1.06 μm and 0.53 μm Laser Pulses

Published online by Cambridge University Press:  15 February 2011

R.M. Walser ,
M.F. Becker ,
J.G. Ambrose  and
D.Y. Sheng
R.M. Walser
Affiliation:
Electronics Research Center and The Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas, USA
M.F. Becker
Affiliation:
Electronics Research Center and The Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas, USA
J.G. Ambrose
Affiliation:
Electronics Research Center and The Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas, USA
D.Y. Sheng
Affiliation:
Electronics Research Center and The Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas, USA
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Several types of periodic ripple structures have been observed on the surface of solids that have been laser irradiated with beam intensities near their melting thresholds.1-7 We restrict our attention here to the coherent, onedimensional (RD) gratings induced by linearly polarized beams.3-7 These gratings have a period close to the free space laser wavelength (λ0) for normally incident beams and are normally found in the beam spot near the melt boundary (Fig. 1). The grating lines are always perpendicular to the optical electric field Ei independent of the crystallographic orientation of the sample.

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References

REFERENCES

1. Koo, J.C. and Slusher, R.E., Appl. Phys. Lett. 28, 614 (1976).CrossRefGoogle Scholar
2. Maracas, G.N., Harris, G.L., Lee, C.A. and McFarlane, R.A., Appl. Phys. Lett. 33, 453 (1978).CrossRefGoogle Scholar
3. Emmony, D.C., Howson, R.P., and Willis, L.J., Appl. Phys. Lett. 23, 598 (1973).Google Scholar
4. Cutter, M.A., Key, P.Y. and Little, V.I., Appl. Optics 13, 1399 (1974).CrossRefGoogle Scholar
5. Isenor, N.R., Appl. Phys. Lett. 31, 148 (1977).CrossRefGoogle Scholar
6. Leamy, H.J., Rozgonyi, G.A. and Sheng, T.T., Appl. Phys. Lett. 32, 536 (1978).CrossRefGoogle Scholar
7. Oron, M. and Sorenson, G., Appl. Phys. Lett. 35, 782 (1979).Google Scholar
8. The authors would like to thank Dr.Syllaios, A. and Dr.Sandfort, R. of Monsanto for providing the silicon epitaxial wafers.Google Scholar
9. Nashiyama, I., Phys. Rev. B 19, 101 (1979).CrossRefGoogle Scholar
10. Christian, J.W., Physical Metallurgy, Cahn, R.W., ed., North-Holland Publ. Co., Amsterdam, 1965, p. 477.Google Scholar
11. Willis, L.J. and Emmony, D.C., Optics and Laser Technol. 7, 222 (1975).Google Scholar