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Heteroepitaxy of Si/Si1−xGex Grown by Remote Plasma-Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  16 February 2011

T. Hsu ,
R. Qian ,
D. Kinosky ,
J. Irby ,
B. Anthony ,
S. Banerjee ,
A. Tasch  and
C. Magee
T. Hsu
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
R. Qian
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
D. Kinosky
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
J. Irby
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
B. Anthony
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
S. Banerjee
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
A. Tasch
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
C. Magee
Affiliation:
Evans East Inc., Plainsboro, NJ 08536
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Abstract

Low temperature heteroepitaxial growth of Si1−xGex films with mole fractions “x” ranging from 0.07 to 0.72 on Si(100) has been achieved by Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) at substrate temperatures of 305°C and 450°C. Reflection High Energy Electron Diffraction (RHEED), Transmission Electron Microscopy (TEM), and Secondary Ion Mass Spectroscopy (SIMS) were employed to characterize the crystallinity, composition and interfacial sharpness. The Si1−xGex films with thickness below the critical layer thickness were confirmed to have excellent crystallinity with defect density below the sensitivity of TEM analysis (105 cm−2). The Ge profile, from SIMS analysis, in a Si/Si0.8Ge0.2/Si/Si0.82Ge0.18 multilayer structure was found to have a transition width of 30Å/decade, which is the resolution limit of SIMS analysis. There is no Ge segregation observed at the Si/Si1−xGex interface. A superlattice structure with 24 pairs of Si(60Å)/Si0.8Ge0.2 (60Å) layers has been successfully grown by RPCVD at 450°C. From cross-sectional TEM analysis, very low defect densities and abrupt Ge transitions were confirmed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 223
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] People, R., J. Quantum Electronics, QE-22, 1696, 1986.Google Scholar
[2] Taft, R. C., Plummer, J. D., and Iyer, S. S., Proceeding of IEDM, 655, 1989.Google Scholar
[3] Schreiber, H.-U. and Bosch, B. G., Proceeding of JEDM, 643, 1989.Google Scholar
[4] Daembkes, H., Herzog, H., Jorke, H., Kibbel, H., and Kaspar, E., Transactions on Electron Devices, vol. ED-33, No.5, 633, 1986.Google Scholar
[5] Pearsall, T. and Bean, J., IEEE Electron Device Letters, vol. EDL-7, No.5, 308, 1986.Google Scholar
[6] Pearsall, T., Temkin, H., Bean, J., and Luryi, S., IEEE Electron Device Letters, vol. EDL-7, No.5, 330, 1986.Google Scholar
[7] Luyri, S., Kastalsky, A., and Bean, J., IEEE Trasns. Electron Devices, vol. ED-31, 1135, 1984.Google Scholar
[8] Zalm, P., van der Walle, G., Gravesteijn, D., and van Gorkum, A., Appl. Phys. Lett., 55(24), 11, 2520, 1989.Google Scholar
[9] Iyer, S., Tsang, J., Copel, M., Pukite, P., and Tromp, R., Appl. Phys. Lett., 54(3), 16, 219, 1989.Google Scholar
[10] Hsu, T., Anthony, B., Breaux, L., Banerjee, S., Tasch, A., ”Characterizationo f Plasmaenhanced CVD Processes”, edited by Hess, D., Lucovsky, G., and Ibbotson, D., (Material Research Society, Pittsburgh, PA), 139, 1990.Google Scholar
[11] Anthony, B., Breaux, L., Hsu, T., Banerjee, S., and Tasch, A., J. of Vac. sci. and Tech., B7(4), 621, 1989.Google Scholar
[12] Meyerson, B., Uram, K., and LeGoues, F., Appl. Phys. Lett., 53(25), 2555, 1988.Google Scholar