Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-01-27T13:29:35.860Z Has data issue: false hasContentIssue false
  • English
  • Français

Heteroepitaxy of Si, Ge, and GaAs Films on CaF2/Si Structures

Published online by Cambridge University Press:  25 February 2011

H. Ishiwara ,
T. Asano ,
H. C. Lee ,
Y. Kuriyama ,
K. Seki  and
S. Furukawa
H. Ishiwara
Affiliation:
Tokyo Institute of Technology, Graduate School of Science and Engineering, Nagatsuda, Midoriku, Yokohama 227 Japan
T. Asano
Affiliation:
Tokyo Institute of Technology, Graduate School of Science and Engineering, Nagatsuda, Midoriku, Yokohama 227 Japan
H. C. Lee
Affiliation:
Tokyo Institute of Technology, Graduate School of Science and Engineering, Nagatsuda, Midoriku, Yokohama 227 Japan
Y. Kuriyama
Affiliation:
Tokyo Institute of Technology, Graduate School of Science and Engineering, Nagatsuda, Midoriku, Yokohama 227 Japan
K. Seki
Affiliation:
Tokyo Institute of Technology, Graduate School of Science and Engineering, Nagatsuda, Midoriku, Yokohama 227 Japan
S. Furukawa
Affiliation:
Tokyo Institute of Technology, Graduate School of Science and Engineering, Nagatsuda, Midoriku, Yokohama 227 Japan
Get access

Abstract

Recent progress in the research of heteroepitaxial growth of Si, Ge, and GaAs films on CaF2/Si structures is reviewed. Growth conditions and material properties of the Si/CaF2/Si structures are first discussed. It is shown that such growth techniques as the predeposition technique and the recrystallization method are useful to improve the crystalline quality of Si films on the CaF2/Si structures. Then, device application of the Si/CaF2/Si structure to field effect transistors with epitaxial MIS (metal-insulatorsemiconductor) gate electrodes is described. Finally, epitaxial growth of Ge and GaAs films on the CaF2/Si structure are discussed, in which such growth parameters as the substrate temperature and growth rate are optimized to obtain high-quality films with excellent crystallinity and smooth surface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 105
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ishiwara, H. and Asano, T.: Appl. Phys. Lett. 40, 66 (1982)CrossRefGoogle Scholar
[2] Asano, T. and Ishiwara, H.: Appl. Phys. Lett. 42, 517 (1983)CrossRefGoogle Scholar
[3] Asano, T. and Ishiwara, H.: J. Appl. Phys. 55, 3566 (1984)Google Scholar
[4] Asano, T., Kuriyama, Y. and Ishiwara, H.: Electron. Lett. 21, 386 (1985)CrossRefGoogle Scholar
[5] Fathauer, R.W., Schowalter, L.J., Lewis, N., and Hall, E.L.: Proc. 1st Intern. Symp. on Silicon Molecular Beam Epitaxy, ed. by J.C., Bean (Electrochem. Soc. 1985) p.277 Google Scholar
[6] Fathauer, R.W., Schowalter, L.J., Lewis, N., and Hall, E.L.: in Thin Films - Interfaces and Phenomena, edited by Nemanich, R.J., Ho, P.S. and Lau, S.S. (Mat. Res. Soc., Pittsburgh, 1986) in pressGoogle Scholar
[7] Asano, T. and Ishiwara, H.: Jpn. J. Appl. Phys. 21, L630 (1982)CrossRefGoogle Scholar
[8] Ishiwara, H. and Asano, T.: Jpn. J. Appl. Phys. Suppl. 22–1, 201 (1983)Google Scholar
[9] Kanemaru, S., Ishiwara, H., Asano, T., and Furukawa, S.: Extended Abstract of 2nd Intern. Conf. on Modulated Semiconductor Structures, Kyoto, Japan, 1985, and Surface Sci. (in press)Google Scholar
[10] Asano, T., Ishiwara, H., Lee, H.C., Tsutsui, K., and Furukawa, S.: Jpn. J. Appl. Phys. 25, L139 (1986)CrossRefGoogle Scholar
[11] Asano, T., Ishiwara, H., and Kaifu, N.: Jpn. J. Appl. Phys. 22, 1476 (1983)Google Scholar
[12] Lau, S.S., Matteson, S., Mayer, J.W., Reversz, P., Roth, J., Sigmon, T.W., and Cass, T.: Appl. Phys. Lett. 34, 76 (1979)Google Scholar
[13] Onoda, H., Katoh, T., Hirashita, N., and Sasaki, M.: Extended Abstract of 17th Conf. on Solid State Devices and Materials, Tokyo, 1985, p.151Google Scholar
[14] Pfeiffer, L., Phillips, J.M., Smith, T.P. III, Augustyniak, W.M., and West, K.W.: Appl. Phys. Lett. 46, 947 (1985)CrossRefGoogle Scholar
[15] Smith, T.P. III, Phillips, J.M., Augustyniak, W.M., and Stiles, P.J.: Appl. Phys. Lett. 45, 907 (1984)Google Scholar
[16] Asano, T., Ishiwara, H., Lee, H.C., Tsutsui, K. and Furukawa, S.: Extended Abstract of 17th Conf. on Solid State Devices and Materials, Tokyo, 1985, p.217Google Scholar