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Hetero-Epitaxy of Crystalline Perovskite Oxides on GaAs(001)

Published online by Cambridge University Press:  01 February 2011

Y. Liang ,
J. Kulik ,
Y. Wei ,
T. Eschrich ,
J. Curless ,
B. Craigo  and
S. Smith
Y. Liang
Affiliation:
Microelectronics and Physical Sciences Laboratory
J. Kulik
Affiliation:
Process and Materials Characterization Laboratory Motorola Inc., 2100 E Elloit Road, Tempe, AZ 85284
Y. Wei
Affiliation:
Microelectronics and Physical Sciences Laboratory
T. Eschrich
Affiliation:
Microelectronics and Physical Sciences Laboratory
J. Curless
Affiliation:
Microelectronics and Physical Sciences Laboratory
B. Craigo
Affiliation:
Microelectronics and Physical Sciences Laboratory
S. Smith
Affiliation:
Microelectronics and Physical Sciences Laboratory
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Abstract

Hetero-epitaxy of crystalline perovskite SrTiO3 and BaTiO3 on GaAs(001) was achieved using molecular beam epitaxy. A number of surface and interface techniques were used to characterize the growth, structural, and chemical properties of epitaxial oxide films on GaAs. Reflection-high-energy-electron diffraction of SrTiO3 and BaTiO3 showed streaky diffraction features and low diffraction background through out growth, indicating that the epitaxial SrTiO3 and BaTiO3 films had good crystallinity. X-ray diffraction showed an epitaxial relationship between these perovskite oxides and GaAs(001) substrates. Transmission electron microscopy and scanning probe microscopy revealed an abrupt oxide/GaAs interface and smooth SrTiO3 and BaTiO3 surfaces. The success of growth of epitaxial perovskite oxides on GaAs enabled us to integrate a number of functional oxides such as piezoelectric and magnetic oxides epitaxially on GaAs substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E8.4
Copyright
Copyright © Materials Research Society 2004

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References

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