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Heteroepitaxial Growth of Zinc Oxide Single Crystal Thin Films on (111) Plane YSZ by Pulsed Laser Deposition

Published online by Cambridge University Press:  10 February 2011

Hiromichi Ohta ,
Hiroaki Tanji ,
Masahiro Orita ,
Hideo Hosono  and
Hiroshi Kawazoe
Hiromichi Ohta
Affiliation:
HOYA corporation. R&D center. 3-3-1 Musashino, Akishima-shi, Tokyo 196-8510, JAPAN. Email hohta@rdc.hoya.co.jp
Hiroaki Tanji
Affiliation:
HOYA corporation. R&D center. 3-3-1 Musashino, Akishima-shi, Tokyo 196-8510, JAPAN.
Masahiro Orita
Affiliation:
HOYA corporation. R&D center. 3-3-1 Musashino, Akishima-shi, Tokyo 196-8510, JAPAN.
Hideo Hosono
Affiliation:
Tokyo Institute of Technology, Midori-ku. Yokohama-shi, Kanagawva 226-8503, JAPAN
Hiroshi Kawazoe
Affiliation:
Tokyo Institute of Technology, Midori-ku. Yokohama-shi, Kanagawva 226-8503, JAPAN
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Abstract

Heteroepitaxial ZnO films were grown on (111) surface of yttria stabilized zirconia (YSZ) and (0001) surface of sapphire by PLD method, using KrF eximer laser (248nm) in an ultra-high-vacuum chamber. ZnO grown on YSZ (111) at the substrate temperature of 800°C had an epitaxial relationship at the ZnO/YSZ interface of ZnO [1120]//YSZ [110]. Hexagonalshaped grains were observed whose surfaces were atomically flat. The grain size of ZnO increased and the Hall mobility rose toward 1400nm and 75cm2/Vs. respectively as film thickness increased from 10 nm to 800 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 309
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Jonson, M. A. L., Fujita, S., Rowland, W. H. Jr., Hluahes, W. C., Cook, I. W., Schetzina, J. R. J. E.. J. Electronic Materials. 25. 855–862 (1996).Google Scholar