Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-02-09T03:17:12.657Z Has data issue: false hasContentIssue false
  • English
  • Français

Heteroepitaxial Growth of Germanium Films by Supersonic Free Jet Chemical Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

Djula Eres ,
J. W. Sharp  and
D. H. Lowndes
Djula Eres
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
J. W. Sharp
Affiliation:
The University of Tennessee, Knoxville, TN
D. H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
Get access

Abstract

A supersonic free jet operated in continuous wave and pulsed mode was used to grow Ge films on (100) GaAs and (100) Si substrates. The Ge-bearing source molecule digermane (Ge2H6) was seeded (at 5% concentration) in a helium carrier gas. A free jet expansion of this gas mixture was directed toward the heated substrate surface, where Ge film growth took place by surface-induced thermal decomposition of the ballistically impinging digermane molecules. The thickness distribution across the substrate surface was fitted by a cosmJ distribution. The values of m spanned the range 6–35. The upper limit on growth resulting from “background” gas scattered out of the jet was found to be less than 10% of the Ge film thickness for growth on (100) GaAs, and around 25% for growth on (100) Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 359
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Molecular Beam Epitaxy 1988, J. Cryst. Growth 95, 431 (1988).Google Scholar
2 Ibid. p. 121.Google Scholar
3Hirayama, H., Tatsumi, T., and Aizaki, N., Appl. Phys. Lett., 52 1484 (1988).Google Scholar
4Eres, Djula, Lowndes, D. H., Tischler, J. Z., sharp, J. W., Haynes, T. F., and Chisholm, M. F., J. Appl. Phys., Feb. (1990).Google Scholar
5Anderson, J. B., in Molecular Beams and Low Density Gasdynamics, ed. by Wegener, P. P., (Marcel Dekker, New York, 1974) p.1.Google Scholar
6Madhukar, A. and Ghaisas, S. V., CRC Crit. Rev. Solid State Mater. Sci. 14,1 (1988).Google Scholar
7Herman, M. A. and Sitter, H., Molecular Beam Epitaxy, Fundamentals and Current Status, (Springer-Verlag Berlin Heidelberg 1989), p. 34.Google Scholar
8Ashkenas, H. and Sherman, F. S. in Rarefied Gas Dynamics, 4th Symposium, Vol. II, ed. de Leeuw, J. H., (Academic Press, New York, 1966), p. 260.Google Scholar
9Kelly, R. and Dreyfus, R. W., Nucl. Instrum. Methods, B32, 341 (1988).Google Scholar