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Heteroepitaxial Growth of Cubic Boron Nitride on Silicon

Published online by Cambridge University Press:  25 February 2011

G. L. Doll ,
T. A. Perry ,
J. A. Sell ,
C. A. TAYLORS  and
R. Clarke
G. L. Doll
Affiliation:
Physics Department, General Motors Research Laboratories, Warren, MI 48090–9055
T. A. Perry
Affiliation:
Physics Department, General Motors Research Laboratories, Warren, MI 48090–9055
J. A. Sell
Affiliation:
Physics Department, General Motors Research Laboratories, Warren, MI 48090–9055
C. A. TAYLORS
Affiliation:
Harrison B. Randall Laboratory of Physics, Ann Arbor, MI 48109–1120
R. Clarke
Affiliation:
Harrison B. Randall Laboratory of Physics, Ann Arbor, MI 48109–1120
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Abstract

New x-ray diffraction measurements performed on bonm nitride films deposited by pulsed excimer laser deposition are presented. The x-ray data, taken with both a molybdenum rotating anode source and synchrotron radiation, indicate that the epitaxial cBN films are ≤ 200 Å thick. We also report the successful growth of oriented crystalline diamond on the (001) surface of cBN/Si substrates using the method of pulsed laser deposition. X-ray diffraction measurements indicate that the diamond layer is 200 Å thick with a lattice constant of 3.56 Å. The structures of metastable films (cBN and diamond) are very sensitive to growth conditions: we present evidence that an epitaxial-crystalline to incoherent phase transition occurs when the thickness of the films exceeds a critical value (∼ 200 Å for our present growth conditions).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 585
Copyright
Copyright © Materials Research Society 1992

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References

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