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Heat-Treatment Induced Defects in Cz-Silicon

Published online by Cambridge University Press:  03 September 2012

S. Dannefaer ,
T. Bretagnon ,
K. Abdurahman ,
D. Kerr  and
S. Hahn
S. Dannefaer
Affiliation:
Department of Physics, University of Winnipeg, Winnipeg, Canada, R3B 2E9
T. Bretagnon
Affiliation:
Department of Physics, University of Winnipeg, Winnipeg, Canada, R3B 2E9
K. Abdurahman
Affiliation:
Department of Physics, University of Winnipeg, Winnipeg, Canada, R3B 2E9
D. Kerr
Affiliation:
Department of Physics, University of Winnipeg, Winnipeg, Canada, R3B 2E9
S. Hahn
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, U.S.A.
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Abstract

Positron lifetime results show that vacancies can be retained after growth of Czochralski silicon at concentrations of ∼x1016/cm3. Rapid thermal annealing as well as furnace annealing increase the vacancy concentration. The vacancies are predominantly trapped by oxygen interstitial clusters in lightly B-doped materials, and these complexes appear to have temperature dependent configurations which can be quenched-in by rapid cooling. Heavy Sb doping results in trapping of vacancies by the Sb impuritie

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References

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