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H-Atom Assisted jet Vapor Deposition of Parylene-n polymer

Published online by Cambridge University Press:  10 February 2011

B. L. Halpern ,
P. Komarenko ,
R. F. Graves ,
P. D. Fuqua ,
J. F. Mcdonald ,
G.-R. Yang ,
L. Wang ,
T. M. Lu ,
M. Tomozawa  and
I. Maitthew
B. L. Halpern
Affiliation:
Jet Process Corporation, New Haven CT 06511
P. Komarenko
Affiliation:
Jet Process Corporation, New Haven CT 06511
R. F. Graves
Affiliation:
Jet Process Corporation, New Haven CT 06511
P. D. Fuqua
Affiliation:
Jet Process Corporation, New Haven CT 06511
J. F. Mcdonald
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY
G.-R. Yang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY
L. Wang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY
T. M. Lu
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY
M. Tomozawa
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY
I. Maitthew
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY
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Abstract

We describe a new approach to deposition of Parylene N thin films. It utilizes a small scale, sonic speed, Jet Vapor DepositionTM (JVDTM) process technology in place of the conventional larger scale, slow flow, Gorham apparatus. It employs a simple but powerful strategy to promote radical polymerization: exposure of the growing film, during deposition, to a high flux of atomic hydrogen. We believe that H atoms have two effects: they clean oxygen from the substrate, and they promote crosslinking in the Parylene film by abstraction of H atoms from the Parylene ring or side groups. With “H atom assisted JVD” Parylene N deposits and adheres even on warm substrates; it has reduced index of refraction and dielectric constant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 544: Symposium Y – Plasma Deposition and Treatment of Polymers , 1998 , 153
Copyright
Copyright © Materials Research Society 1999

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References

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