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H States, Impurity Passivation and Gettering Studies in H-Implanted Si Crystals

Published online by Cambridge University Press:  26 February 2011

Bulat N. Mukashev  and
Serikbol Zh. Tokmoldin
Bulat N. Mukashev
Affiliation:
Physical Technical Institute, Kazakh Academy of Sciences, 480082. Alma-Ata, Republic of Kazakhstan
Serikbol Zh. Tokmoldin
Affiliation:
Physical Technical Institute, Kazakh Academy of Sciences, 480082. Alma-Ata, Republic of Kazakhstan
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Abstract

IR and DLTS studies of H-implanted Si crystals are performed. It is shown that H is a bistable impurity: it has an equilibrium site at a T-site for H+ and H- and at a BC-site for H°. The mechanisms of H-passivation of defects and shallow and deep impurities are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1017
Copyright
Copyright © Materials Research Society 1992

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