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Growth Processes of Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  17 March 2011

John Robertson
John Robertson*
Affiliation:
Engineering Dept, Cambridge University, Cambridge CB2 1PZ, UK.jr@eng.cam.ac.uk
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Abstract

The surface and subsurface processes occurring during the growth of a-Si:H are analysed to understand why dangling bond defects and weak Si-Si bonds form. We argue that hydrogen elimination to form the Si-Si network is the rate limiting process at low temperature, and this leads to the creation of weak Si-Si bonds. Dangling bonds form subsequently from weak bonds by a defect pool type process. Plasma processes, such as ion bombardment, which dehydrogenate the surface layers, can reduce the weak bond density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A1.4
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Matsuda, A, Tanaka, K, J Non-Cryst Solids 97 1367 (1987)Google Scholar
2. Hishikawa, Y, Wakisaka, H, Kuwano, Y, J App Phys 73 4227 (1993)Google Scholar
3. Roca, P Cabarrocas, i, Bouizem, Y, Theye, M L, Phil Mag B 65 1025 (1992)Google Scholar
4. Matsuda, A, J Vac Sci Technol A 16 365 (1998)Google Scholar
5. Gallagher, A, J App Phys 63 2406 (1988)Google Scholar
6. Tanaka, K and Matsuda, A, Mat Sci Rep 2 139 (1987)Google Scholar
7. Perrin, J, J Non-Cryst Solids 137 639 (1991); J Perrin in ‘Plasma deposition’, ed G Bruno et al (Academic, New York, 1995) p177Google Scholar
8. Tsai, C C, Knight, J C, Chang, G and Wacker, B, J App Phys 59 2998 (1986)Google Scholar
9. Street, R A and Winer, K, Phys Rev B 40 6236 (1989)Google Scholar
10. Powell, M J and Deane, S C, Phys Rev B 48 10815 (1993); 53 10121 (1996)Google Scholar
11. Yamasaki, S, Phil Mag B 56 79 (1987)Google Scholar
12. Stutzmann, M, Phil Mag B 60 531 (1989)Google Scholar
13. Beyer, W, J Non-Cryst Solids 198 40 (1996); W Beyer, in ‘Semiconductors and Semimetals’ ed J Pankove, vol 61 (Academic Press, NY, 1999)Google Scholar
14. Kushner, M J, J App Phys 63 2532 (1988); M J McCaughey and M J Kushner, J App Phys 65 186 (1989)Google Scholar
15. Gleason, K, Wang, K S, Chen, M K and Reimer, J A, J App Phys 61 2866 (1987)Google Scholar
16. Ganguly, G, Matsuda, A, Phys Rev B 47 3661 (1993); J Non-Cryst Solids 164 31 (1993)Google Scholar
17. Winer, K, Phys Rev B 41 7952 (1990)Google Scholar
18. Street, R A, Phys Rev B 44 10610 (1991)Google Scholar
19. Sanden, M C M van de, Kessels, W M M, Smets, A H M, Korevaar, B A, Severens, R J, Schram, D C, Mat Res Soc Symp Proc 557 13 (1999)Google Scholar
20. Jackson, W B, J Non-Cryst Solids 164 263 (1993)Google Scholar
21. Robertson, J and Powell, M J, Thin Solid Films 337 32 (1999)Google Scholar
22. Robertson, J, J App Phys 87 2608 (2000)Google Scholar
23. Perrin, J, Shiratani, M, Kae-Nune, P, Videlot, H, Jolly, J and Guillon, J, J Vac Sci Technol A 16 278 (1998)Google Scholar
24. Matsuda, A, Nomoto, K, Takeuchi, Y, Suzuki, A, Yuuki, A and Perrin, J, Surf Sci 227 50 (1990)Google Scholar
25.However, calculations find that the SiH3 does not bind to Si-H surface bonds (G N Parsons, private communication), which is a serious unresolved problem for this model..Google Scholar
26. Koleske, D D, Gates, S M and Jackson, B, J Chem Phys 101 3301 (1994)Google Scholar
27. Srinivasan, E, Yang, H and Parsons, G N, J Chem Phys 105 5467 (1996)Google Scholar
28. Parsons, G N, private communicationGoogle Scholar
29. Greenlief, C M, Gates, S M and Holbert, P A, J Vac Sci Technol A 7 1845 (1989)Google Scholar
30. Collins, R W, Yang, B Y, J Vac Sci Technol B 7 1155 (1989)Google Scholar
31. Yamasaki, S, Umeda, T, Isoya, J, Tanaka, K, App Phys Lett 70 1137 (1997); this volumeGoogle Scholar
32. Porter, D A, Easterling, K E, ‘Phase Transformations in Metals and Alloys’ (Chapman & Hall, London 1992)p17, p308 Google Scholar
33. Acco, S, Williamson, D L, Stolk, P A, Boogaard, M J van der, Sinke, W C, Weg, W F van, Roorda, S and Zalm, P C, Phys Rev B 53 4415 (1996)Google Scholar
34. Acco, S, Beyer, W, vanFaassen, E E and Weg, W F van der, J App Phys 82 2862 (1997)Google Scholar
35. Knights, J C, J Non-Cryst Solids 32 393 (1977)Google Scholar
36. Walle, C G Van de, Phys Rev B 49 4579 (1994)Google Scholar
37. Kampas, F J and Griffith, R W, App Phys Lett 39 407 (1981)Google Scholar
38. Scott, B A, Reimer, J A and Longeway, P A, J App Phys 54 6853 (1983)Google Scholar
39. Kessels, W M M, Severens, R J, Sanden, M C M van der and Schram, D C, J Non-Cryst Solids 227 133 (1998)Google Scholar
40. Chang, K J and Chadi, J D, Phys Rev Lett 62 937 (1989); Phys Rev B 40 11644 (1990)Google Scholar
41. Robertson, J, Chen, C W, Powell, M J, Deane, S C, J Non-Cryst Solids 227 138 (1998)Google Scholar
42. Miyoshi, Y, Yoshida, Y, Miyazaki, S and Hirose, M, J Non-Cryst Solids 198 1029 (1996)Google Scholar
43. Moller, W, App Phys A 56 527 (1993)Google Scholar
44. Perrin, J, Roca, P Cabarrocas, I, Allain, B, Friedt, J M, Jpn J App Phys 27 2041 (1988)Google Scholar
45. Roca, P Cabarrocas, I, App Phys Lett 65 1674 (1995)Google Scholar
46. Williamson, D L, Mat Res Soc Symp Proc 557 251 (1999)Google Scholar
47. French, I D, Deane, S C, Murley, D T, Hewett, J, Gale, I G and Powell, M J, Mat Res Soc Symp Proc 467 875 (1997)Google Scholar
48. Wehrspohn, R B, Deane, S C, French, I D, Gale, I G, Hewett, J, Powell, M J, Robertson, J, J Appl Phys 87 144 (2000)Google Scholar