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Growth Process of Si and GaAs in the Heterostructure GaAs/Si/GaAs(100).

Published online by Cambridge University Press:  21 February 2011

M. Lopez ,
Y. Takano ,
K. Pak  and
H. Yonezu
M. Lopez
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tempaku-cho, Toyohashi, Aichi 441, Japan.
Y. Takano
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tempaku-cho, Toyohashi, Aichi 441, Japan.
K. Pak
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tempaku-cho, Toyohashi, Aichi 441, Japan.
H. Yonezu
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tempaku-cho, Toyohashi, Aichi 441, Japan.
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Abstract

The growth mode of Si on GaAs(100) substrates and that of GaAs on very thin (1/4 ∼ 3 ML) Si films grown pseudomorphically on GaAs was investigated by observing the behavior of the reflection-high energy electron diffraction (RHEED) specular spot intensity. From the presence of RHEED oscillations during the initial stage of the growth of Si on GaAs we infer a two-dimensional growth with nucleation on the terraces up to a thickness of 3 ML. During the posterior growth of GaAs on the pseudomorphic Si films, a tendency towards three dimensional growth was observed. This tendency increased with the Si interlayer thickness. The causes of the formation of these islands are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 577
Copyright
Copyright © Materials Research Society 1992

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References

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