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Growth of Thin Nickel Silicide Layers on Clean B-Doped Si(111) Surfaces at Room Temperature

Published online by Cambridge University Press:  28 February 2011

L. Luo ,
G. A. Smith  and
W. M. Gibson
L. Luo
Affiliation:
State University of New York at Albany, Department of Physics, Albany, NY 12222
G. A. Smith
Affiliation:
Also at GE Corporate Research and Development Center, Schenectady, NY 12301
W. M. Gibson
Affiliation:
State University of New York at Albany, Department of Physics, Albany, NY 12222
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Abstract

The initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ~ 3 ML) leads to the growth of NiSi2 which is thought to be a diffusion barrier that terminates further formation of NiSi2 at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 263
Copyright
Copyright © Materials Research Society 1990

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References

References:

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